Semiconductor device and method for manufacturing the same

ABSTRACT

A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.

TECHNICAL FIELD

The present invention relates to a semiconductor device including anoxide semiconductor and a method for manufacturing the semiconductordevice.

In this specification, a “semiconductor device” refers to all deviceswhich can function by utilizing semiconductor characteristics, andelectro-optical devices, semiconductor circuits, and electronic devicesare all included in the category of the semiconductor device.

BACKGROUND ART

A technique for manufacturing a thin film transistor (TFT) by using athin semiconductor film formed over a substrate having an insulatingsurface has attracted attention. The technique is widely used for thinfilm transistors or electronic devices such as electro-optical devices.A silicon-based semiconductor material is known as a material for a thinsemiconductor film which can be used in a thin film transistor. Otherthan the silicon-based semiconductor material, an oxide semiconductorhas attracted attention.

Better electric characteristics of a transistor including an oxidesemiconductor are required for application to semiconductor devices withhigher performance. A technique has been reported in which in atransistor including an oxide semiconductor, for the purpose ofuniformity and high-speed operation, hydrogen or deuterium contained ina source and drain electrodes is diffused into an oxide semiconductorlayer, whereby the resistance of regions in contact with the source anddrain electrodes in the oxide semiconductor layer is reduced (e.g.,Patent Document 1).

REFERENCE

[Patent Document 1] Japanese Published Patent Application No. 2008-72025

DISCLOSURE OF INVENTION

When on-state characteristics of a transistor including an oxidesemiconductor are improved, high-speed response and high-speed operationof a semiconductor device can be obtained; thus, a semiconductor devicewith higher performance can be achieved.

In view of the above, an object of one embodiment of the presentinvention is to provide a transistor including an oxide semiconductor,which has good on-state characteristics.

Further, an object of one embodiment of the present invention is toprovide a high-performance semiconductor device including a transistorcapable of high-speed response and high-speed operation.

In a transistor including an oxide semiconductor layer, factors whichinduce oxygen defects (hereinafter, oxygen-defect-inducing factors) areintroduced (added) into the oxide semiconductor layer, whereby theresistance of a source region and a drain region is selectively reduced.The oxygen-defect-inducing factors are introduced into the oxidesemiconductor layer, whereby oxygen defects which serve as donors can beeffectively formed in the oxide semiconductor layer. Therefore, theoxygen-defect-inducing factors can also be considered as donor factorsfor an oxide semiconductor, and the resistance of the oxidesemiconductor layer is reduced by the donor factors.

As the oxygen-defect-inducing factors to be introduced are preferablyone or more elements selected from titanium (Ti), tungsten (W),molybdenum (Mo), aluminum (Al), cobalt (Co), zinc (Zn), indium (In),silicon (Si), and boron (B). Hydrogen or nitrogen can be added inaddition to the above oxygen-defect-inducing factor. Note that it ismore preferable to use a metal element with a high oxygen affinity asthe oxygen-defect-inducing factors. In that case, it is preferable touse a single ion of the above oxygen-defect-inducing factor or a hydrideion, a fluoride ion, or a chloride ion.

In this specification, oxygen-defect-inducing factors are selectivelyintroduced into a formed oxide semiconductor layer by an ionimplantation method or a doping method. In addition, heat treatment maybe performed after the oxygen-defect-inducing factors are introduced.

One embodiment of the invention disclosed in this specification is asemiconductor device which includes an oxide semiconductor layerincluding a channel formation region and a source and drain regionscontaining oxygen-defect-inducing factors over a substrate having aninsulating surface; a gate insulating layer over the oxide semiconductorlayer; a gate electrode layer overlapping with the channel formationregion, over the gate insulating layer; an insulating layer covering thegate insulating layer, the oxide semiconductor layer, and the gateelectrode layer; and a source electrode layer electrically connected tothe source region and a drain electrode layer electrically connected tothe drain region over the insulating layer.

One embodiment of the present invention disclosed in this specificationis a semiconductor device which includes an oxide semiconductor layerincluding a channel formation region, a first region containingoxygen-defect-inducing factors, and a second region containingoxygen-defect-inducing factors over a substrate having an insulatingsurface; a gate insulating layer over the oxide semiconductor layer; agate electrode layer overlapping with the channel formation region, overthe gate insulating layer; an insulating layer covering the gateinsulating layer, the oxide semiconductor layer, and the gate electrodelayer; and a source electrode layer electrically connected to the sourceregion and a drain electrode layer electrically connected to the drainregion over the insulating layer. The first region is one of a source ordrain region. The second region is provided between the channelformation region and the first region and has higher resistance than thefirst region.

One embodiment of the present invention disclosed in this specificationis a method for manufacturing a semiconductor device. The methodincludes the steps of forming an oxide semiconductor layer over asubstrate having an insulating surface; forming a gate insulating layerover the oxide semiconductor layer; forming a gate electrode layer overthe gate insulating layer; forming a channel formation region, a sourceregion, and a drain region in the oxide semiconductor layer byperforming introducing treatment of oxygen-defect-inducing factors onthe oxide semiconductor layer for selectively forming oxygen defects;forming an insulating layer covering the gate insulating layer, theoxide semiconductor layer, and the gate electrode layer; and forming asource electrode layer electrically connected to the source region and adrain electrode layer electrically connected to the drain region.

One embodiment of the present invention disclosed in this specificationis a method for manufacturing a semiconductor device. The methodincludes the steps of forming an oxide semiconductor layer over asubstrate having an insulating surface; forming a gate insulating layerover the oxide semiconductor layer; forming a gate electrode layer overthe gate insulating layer; forming an insulating layer covering the gateinsulating layer, the oxide semiconductor layer, and the gate electrodelayer; forming a first region functioning as a source and drain regions,a second region having higher resistance than the first region, and achannel formation region by performing introducing treatment ofoxygen-defect-inducing factors on the oxide semiconductor layer forselectively forming oxygen defects; and forming a source electrode layerelectrically connected to the source region and a drain electrode layerelectrically connected to the drain region.

Note that the ordinal numbers such as “first” and “second” in thisspecification are used for convenience and do not denote the order ofsteps and the stacking order of layers. In addition, the ordinal numbersin this specification do not denote particular names which specify thepresent invention.

Oxygen-defect-inducing factors are introduced into the oxidesemiconductor layer, whereby oxygen defects which serve as donors can beeffectively formed in the oxide semiconductor layer.

In a transistor including an oxide semiconductor layer in which theresistance of a source region and a drain region is reduced byintroducing oxygen-defect-inducing factors, contact resistance betweenthe oxide semiconductor layer and an electrode layer can be reduced;thus, on-state characteristics can be improved. Thus, a transistor withgood electric characteristics can be obtained.

A transistor with good electric characteristics is capable of high-speedresponse and high-speed operation. Thus, a semiconductor deviceincluding the transistor can have high performance.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1D illustrate one embodiment of a semiconductor device and amethod for manufacturing the semiconductor device.

FIGS. 2A to 2D illustrate one embodiment of a semiconductor device and amethod for manufacturing the semiconductor device.

FIGS. 3A to 3D illustrate one embodiment of a semiconductor device and amethod for manufacturing the semiconductor device.

FIGS. 4A to 4D illustrate one embodiment of a semiconductor device and amethod for manufacturing the semiconductor device.

FIGS. 5A to 5C each illustrate one embodiment of a semiconductor device.

FIGS. 6A to 6F each illustrate an electronic device.

FIG. 7 shows the relation between the depth at whichoxygen-defect-inducing factors are introduced and the concentration ofthe oxygen-defect-inducing factors obtained by calculation.

FIGS. 8A and 8B each show density of states obtained by calculation.

FIG. 9 shows a structure used for calculation.

FIGS. 10A and 10B each show density of states of atoms obtained bycalculation.

FIGS. 11A to 11D illustrate one embodiment of a semiconductor device anda method for manufacturing the semiconductor device.

FIGS. 12A to 12E illustrate one embodiment of a semiconductor device anda method for manufacturing the semiconductor device.

FIGS. 13A to 13C illustrate one embodiment of a semiconductor device anda method for manufacturing the semiconductor device.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that modes and detailsdisclosed herein can be modified in various ways without departing fromthe spirit and scope of the present invention. Therefore, the presentinvention is not construed as being limited to description of theembodiments.

Embodiment 1

In this embodiment, one embodiment of a semiconductor device and amethod for manufacturing the semiconductor device will be described withreference to FIGS. 1A to 1D. In this embodiment, a transistor will bedescribed as an example of the semiconductor device.

FIGS. 1A to 1D illustrate an example of a transistor and a method formanufacturing the transistor.

A transistor 410 illustrated in FIG. 1D is a top-gate thin filmtransistor and is also called a planar thin film transistor.

The transistor 410 includes, over a substrate 400 having an insulatingsurface, an insulating layer 407; an oxide semiconductor layer 403including a channel formation region 413, a source region 414 acontaining oxygen-defect-inducing factors, and a drain region 414 bcontaining oxygen-defect-inducing factors; a gate insulating layer 402;and a gate electrode layer 401.

An insulating layer 409 and an insulating layer 411 are stacked to coverthe oxide semiconductor layer 403, the gate insulating layer 402, andthe gate electrode layer 401. A source electrode layer 405 a and a drainelectrode layer 405 b are provided to be electrically connected to thesource region 414 a and the drain region 414 b, respectively, with theinsulating layer 409 and the insulating layer 411 interposedtherebetween.

The source region 414 a and the drain region 414 b are low-resistanceregions in which donors are formed by introducing oxygen-defect-inducingfactors.

A process of manufacturing the transistor 410 over the substrate 400will be described below with reference to FIGS. 1A to 1D.

Although there is no particular limitation on a substrate which can beused as the substrate 400 having an insulating surface, the substrateneeds to have at least heat resistance high enough to withstand heattreatment performed later.

For example, in the case where a glass substrate is used as thesubstrate and the temperature of heat treatment performed later is high,a glass substrate whose strain point is higher than or equal to 730° C.is preferably used. As a material for the glass substrate, for example,a glass material such as aluminosilicate glass, aluminoborosilicateglass, or barium borosilicate glass is used. Note that a glass substratecontaining a larger amount of boron oxide (B₂O₃) than barium oxide(BaO), which is a practical heat-resistant glass substrate, may be used.

Note that instead of the above glass substrate, a substrate formed of aninsulator, such as a ceramic substrate, a quartz substrate, or asapphire substrate may be used. Alternatively, crystallized glass or thelike can be used. Further alternatively, a plastic substrate or the likecan be used as appropriate.

The insulating layer 407 which serves as a base film is formed over thesubstrate 400. The insulating layer 407 has a function of preventingdiffusion of impurity elements from the substrate 400. The insulatinglayer 407 can be formed to have a single-layer structure or astacked-layer structure using one or more of a silicon nitride layer, asilicon oxide layer, a silicon nitride oxide layer, a silicon oxynitridelayer, an aluminum nitride layer, an aluminum oxide layer, an aluminumnitride oxide layer, and/or an aluminum oxynitride layer. The insulatinglayer 407 can be formed by a plasma CVD method, a sputtering method, orthe like. As the insulating layer 407, for example, a silicon oxidelayer can be formed by a sputtering method.

An oxide semiconductor film is formed over the insulating layer 407.

As an oxide semiconductor used for the oxide semiconductor film, thefollowing can be used: an In—Sn—Ga—Zn—O-based oxide semiconductor whichis a four-component metal oxide; an In—Ga—Zn—O-based oxidesemiconductor, an In—Sn—Zn—O-based oxide semiconductor, anIn—Al—Zn—O-based oxide semiconductor, a Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, or aSn—Al—Zn—O-based oxide semiconductor which are three-component metaloxides; an In—Zn—O-based oxide semiconductor, a Sn—Zn—O-based oxidesemiconductor, an Al—Zn—O-based oxide semiconductor, a Zn—Mg—O-basedoxide semiconductor, a Sn—Mg—O-based oxide semiconductor, or anIn—Mg—O-based oxide semiconductor which are two-component metal oxides;or an In—O-based oxide semiconductor, a Sn—O-based oxide semiconductor,or a Zn—O-based oxide semiconductor. Here, for example, theIn—Ga—Zn—O-based oxide semiconductor means an oxide containing at leastIn, Ga, and Zn, and the composition ratio of the elements is notparticularly limited. The In—Ga—Zn—O-based oxide semiconductor maycontain an element other than In, Ga, and Zn. The above oxidesemiconductor film may contain SiO₂.

For the oxide semiconductor film, an oxide semiconductor represented bythe chemical formula, InMO₃(ZnO)_(m)(m>0) can be used. Here, Mrepresents one or more metal elements selected from Ga, Al, Mn, and Co.For example, M can be Ga, Ga and Al, Ga and Mn, Ga and Co, or the like.

The oxide semiconductor film can be formed by a sputtering method. Inthis embodiment, an oxide semiconductor film is formed using anIn—Ga—Zn—O-based oxide target by a sputtering method, and the oxidesemiconductor film is processed into the island-shaped oxidesemiconductor layer 420 (see FIG. 1A).

The gate insulating layer 402 is formed over the oxide semiconductorlayer 420. The gate insulating layer 402 can be formed to have asingle-layer structure or a stacked-layer structure using a siliconoxide layer, a silicon nitride layer, a silicon oxynitride layer, asilicon nitride oxide layer, an aluminum oxide layer, an aluminumnitride layer, an aluminum oxynitride layer, an aluminum nitride oxidelayer, and/or a hafnium oxide layer by a plasma CVD method, a sputteringmethod, or the like. For example, as the gate insulating layer 402, asilicon oxide layer with a thickness of 100 nm may be formed by asputtering method.

Alternatively, the gate insulating layer 402 may have a structure inwhich a silicon oxide layer and a silicon nitride layer are stacked inthis order over the oxide semiconductor layer 420. For example, asilicon oxide layer (SiO_(x) (x>0)) with a thickness of greater than orequal to 5 nm and less than or equal to 300 nm may be formed as a firstgate insulating layer by a sputtering method, and then a silicon nitridelayer (SiN_(y) (y>0)) with a thickness of greater than or equal to 50 nmand less than or equal to 200 nm may be stacked as a second gateinsulating layer over the first gate insulating layer. The thickness ofthe gate insulating layer 402 may be set as appropriate depending oncharacteristics needed for a thin film transistor, and may beapproximately 30 nm to 400 nm.

The gate electrode layer 401 is formed over the gate insulating layer402 (see FIG. 1B). The gate electrode layer 401 can be formed to have asingle-layer or stacked-layer structure using a metal material such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, or scandium, or an alloy material containing any of thesematerials as a main component.

For example, as a two-layer structure of the gate electrode layer 401,the following structures are preferable: a two-layer structure of analuminum layer and a molybdenum layer stacked thereover, a two-layerstructure of a copper layer and a molybdenum layer stacked thereover, atwo-layer structure of a copper layer and a titanium nitride layer or atantalum nitride layer stacked thereover, and a two-layer structure of atitanium nitride layer and a molybdenum layer. As a three-layerstructure, a stack of a tungsten layer or a tungsten nitride layer, alayer of an alloy of aluminum and silicon or an alloy of aluminum andtitanium, and a titanium nitride layer or a titanium layer ispreferable. Note that the gate electrode layer can be formed using alight-transmitting conductive film. As an example of a material for thelight-transmitting conductive film, a light-transmitting conductiveoxide or the like can be given.

Next, oxygen-defect-inducing factors 421 are introduced into the oxidesemiconductor layer 420, so that the oxide semiconductor layer 403including the source region 414 a, the drain region 414 b, and thechannel formation region 413 is formed (see FIG. 1C). The concentrationof the oxygen-defect-inducing factors 421 in each of the source region414 a and the drain region 414 b is preferably, for example, greaterthan or equal to 1×10¹⁹ atoms/cm³ and less than or equal to 1×10²¹atoms/cm³.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of the oxygen-defect-inducing factors 421.

In this specification, the concentration of oxygen-defect-inducingfactors refers to the concentration of oxygen-defect-inducing factorswhich are introduced through the introducing treatment after formationof the oxide semiconductor layer, and elements which are containedduring steps other than the introducing treatment and are the same asthe oxygen-defect-inducing factors are excluded.

As the oxygen-defect-inducing factors 421, one or more elements selectedfrom titanium (Ti), tungsten (W), molybdenum (Mo), aluminum (Al), cobalt(Co), zinc (Zn), indium (In), silicon (Si), and boron (B) can be used.In addition to the above oxygen-defect-inducing factors, hydrogen and/ornitrogen may be used.

The oxygen-defect-inducing factors 421 are selectively introduced intothe oxide semiconductor layer 420, whereby oxygen defects areeffectively induced in the region into which the oxygen-defect-inducingfactors 421 are introduced. The oxygen defects serve as donors; thus,the oxide semiconductor layer 403 including the source region 414 a andthe drain region 414 b the resistance of which is selectively reducedcan be formed.

In this embodiment, the gate electrode layer 401 is used as a mask inthe introducing treatment of the oxygen-defect-inducing factors 421.Thus, the oxygen-defect-inducing factors 421 are not introduced into aregion in the oxide semiconductor layer 403, which overlaps with thegate electrode layer 401, in a self-aligned manner and the regionbecomes the channel formation region 413; in contrast, theoxygen-defect-inducing factors 421 are introduced into a region whichdoes not overlap with the gate electrode layer 401, so that the sourceregion 414 a and the drain region 414 b are formed. A mask for coveringat least the channel formation region in the oxide semiconductor layer420 may be additionally provided for the introducing treatment of theoxygen-defect-inducing factors 421. As the mask, a resist mask formedthrough a photolithography step may be used.

An effect of reducing the resistance by forming oxygen defects in anoxide semiconductor layer was examined on the basis of computationalresults. The calculation was performed on the case where anIn—Ga—Zn—O-based oxide semiconductor material was used for the oxidesemiconductor layer. Note that in the calculation, the composition ratioof In to Ga, Zn, and O of the In—Ga—Zn—O-based oxide semiconductormaterial was 1:1:1:4.

An amorphous structure of an In—Ga—Zn—O-based oxide semiconductor wasprepared by a melt-quench method using classical molecular dynamics (MD)simulation. Here, the calculation was performed on the structure whosethe total number of atoms was 84 and the density was 5.9 g/cm³.Born-Mayer-Huggins potential was used for the interatomic potentialbetween metal and oxygen and between oxygen and oxygen, andLennard-Jones potential was used for the interatomic potential betweenmetal and metal. NTV ensemble was used for the calculation. MaterialsExplorer was used as a calculation program.

After that, the structure obtained by the above classical MD simulationwas optimized by first-principles calculation (quantum MD calculation)using a plane wave-pseudopotential method based on density functionaltheory (DFT), and the density of states was calculated. In addition,structure optimization was also performed on a structure in which one ofoxygen atoms was removed randomly, and the density of states wascalculated. CASTEP was used as a calculation program, and GGA-PBE wasused as an exchange-correlation functional.

FIGS. 8A and 8B each show the density of states of the structureobtained by the above calculation. FIG. 8A shows the density of statesof the structure without oxygen defects, and FIG. 8B shows the densityof states of the structure with oxygen defects. Here, 0 (eV) representsenergy corresponding to the Fermi level. According to FIGS. 8A and 8B,the Fermi level exists at the upper end of the valence band in thestructure without oxygen defects, whereas the Fermi level exists in theconduction band in the structure with oxygen defects. In the structurewith oxygen defects, the Fermi level exists in the conduction band;thus, the number of electrons contributing to conduction is increased,so that a structure having low resistance (i.e., high conductivity) canbe obtained.

As described above, oxygen-defect-inducing factors are selectivelyintroduced into an oxide semiconductor layer to effectively induceoxygen defects, whereby a source region and a drain region theresistance of which is reduced can be formed in the oxide semiconductorlayer.

Note that it is more preferable to use a metal element with a highoxygen affinity as the oxygen-defect-inducing factors 421. As examplesof the metal element with a high oxygen affinity, titanium, aluminum,manganese, magnesium, zirconium, beryllium, and the like are given.Alternatively, copper or the like may be used.

Next, an effect of using a metal element with a high oxygen affinity asthe oxygen-defect-inducing factors will be described on the basis ofcomputational results. This time, calculation was performed on the casewhere titanium was used as a metal element with a high oxygen affinityand an In—Ga—Zn—O-based oxide semiconductor material was used for anoxide semiconductor layer; however, one embodiment of the disclosedinvention in not limited thereto. Note that in the calculation, thecomposition ratio of In to Ga, Zn, and O of the In—Ga—Zn—O-based oxidesemiconductor material was 1:1:1:4.

By introducing the metal element with a high oxygen affinity, movementof oxygen from an amorphous oxide semiconductor to the metal elementwith a high oxygen affinity was observed.

Next, the electron state of a structure in which titanium (Ti) wascontained in the In—Ga—Zn—O-based oxide semiconductor was calculated. Acalculation model and calculation conditions are described below.

FIG. 9 shows the structure of the In—Ga—Zn—O-based oxide semiconductorcontaining Ti, which was used for the calculation. This structure is astructure which is manufactured by first-principles molecular dynamicssimulation and in which Ti is contained in the In—Ga—Zn—O-based oxidesemiconductor that is a stoichiometric composition. Black circlesrepresent metal atoms and white circles represent oxygen atoms. A largeblack circle represents Ti. In the structure of the In—Ga—Zn—O-basedoxide semiconductor containing Ti shown in FIG. 9, the numbers of In,Ga, and Zn are 12, 48, and 1, respectively.

The density of the In—Ga—Zn—O-based oxide semiconductor structurecontaining Ti was fixed at 5.9 g/cm³ which was an experimental value ofan amorphous In—Ga—Zn—O-based oxide semiconductor. The calculation wasperformed on the structure under the calculation conditions describedbelow. CASTEP, first-principles calculation software produced byAccelrys Software Inc., was used for the first-principles calculation.

The calculation was performed on the In—Ga—Zn—O-based oxidesemiconductor structure containing Ti shown in FIG. 9 while thetemperature was decreased from 3000 K to 1500 K, and then to 300 K underconditions that the number of particles (N), the volume (V), and thetemperature (T) were fixed (NVT ensemble), the time step was 1 fsec, thenumber of steps at each temperature was 2000, the electron cut-offenergy was 260 eV, and the k-point sets was 1×1×1. After that, theresulting structure was optimized by calculation under conditions thatthe electron cut-off energy was 420 eV and the k-point sets was 2×2×2,whereby the structure had low energy and was stabilized.

As shown in FIG. 9, titanium is combined with oxygen.

The electron density of states in the In—Ga—Zn—O-based oxidesemiconductor structure containing Ti shown in FIG. 9 was calculatedunder conditions that the electron cut-off energy was 420 eV and thek-point sets was 3×3×3.

FIG. 10A shows the density of states in the whole In—Ga—Zn—O-based oxidesemiconductor structure. FIG. 10B shows the density of states in part ofthe In—Ga—Zn—O-based oxide semiconductor structure containing Ti. InFIGS. 10A and 10B, the horizontal axis represents energy and thevertical axis represents density of states. The origin of the energy inthe horizontal axis represents the energy of the highest occupied levelof electrons. As shown in FIG. 10B, electrons enter the lower end of theconduction band when Ti is contained in the In—Ga—Zn—O-based oxidesemiconductor.

The above results show that when Ti is introduced into anIn—Ga—Zn—O-based oxide semiconductor, Ti is combined with oxygen, sothat deviation from the stoichiometric ratio occurs. Accordingly, anoxygen-deficient state is caused. In an amorphous In—Ga—Zn—O-based oxidesemiconductor, oxygen defects serve as electron donors, which results inan electron-excess state. Thus, when Ti which is easily combined withoxygen is introduced, oxygen defects are caused, which results ingeneration of carriers.

As described above, it can be observed that when metal elements with ahigh oxygen affinity are introduced into an oxide semiconductor layer,oxygen atoms move to the metal elements from the oxide semiconductorlayer, which results in an effective increase in oxygen defects. As aresult, the resistance of a region into which the metal elements havebeen introduced is effectively reduced by the increase in oxygen defectswhich serve as donors.

When a transistor including an oxide semiconductor includes a sourceregion and a drain region whose resistance are reduced by introductionof oxygen-defect-inducing factors, contact resistance between an oxidesemiconductor layer and an electrode layer can be reduced; thus,on-state characteristics (e.g., on-state current or field-effectmobility) are improved. Thus, a transistor with good electriccharacteristics can be obtained.

The oxygen-defect-inducing factors 421 are introduced into the formedoxide semiconductor layer 420 by selectively using an ion implantationmethod or a doping method. In this embodiment, titanium is used as theoxygen-defect-inducing factors 421 and is introduced into the oxidesemiconductor layer 420 by an ion implantation method. As examples ofthe ion implantation method, a method using a titanium tetrachloride(TiCl₄) liquefied gas, a method of vaporizing a solid source, and thelike are given.

Note that, in some cases, oxygen-defect-inducing factors are containedeven in a region of an oxide semiconductor layer, which overlaps with amask (the gate electrode layer 401 in this embodiment), depending on theintroducing conditions (e.g., acceleration energy and injection amountor dose of oxygen-defect-inducing factors). Thus, the region into whichoxygen-defect-inducing factors are introduced can be controlled bysetting introducing conditions and the thickness and size of a mask asappropriate.

For example, calculation was performed on introducing conditions inintroducing treatment of oxygen-defect-inducing factors into an oxidesemiconductor layer by using software called TRIM (transport of ion inmatter). TRIM is software for calculation of ion introducing process bya Monte Carlo method. A model used for the calculation was a stack of asilicon oxide film as the insulating layer 407, an amorphous In—Ga—Zn—Ofilm (composition: InGaZnO₄, density: 6.2 g/cm³, thickness: 50 nm) asthe oxide semiconductor layer 420, and a silicon oxide film (density:2.2 g/cm³, thickness: 100 nm) as the gate insulating layer 402. Theoxygen-defect-inducing factors 421 were introduced into the oxidesemiconductor layer 420 after being made to pass through the gateinsulating layer 402. Titanium ions (Ti⁺) were used as theoxygen-defect-inducing factors 421 and were introduced at a dose of1×10¹⁵ cm⁻² by an ion implantation method. In addition, the accelerationenergy in the calculation were 100 keV, 150 keV, and 200 keV.

FIG. 7 shows the relation between the depth at whichoxygen-defect-inducing factors were introduced and the concentrationobtained by calculation. In FIG. 7, the horizontal axis represents thedepth (nm) from a surface of the oxide semiconductor layer 420, at whichoxygen-defect-inducing factors were introduced and the vertical axisrepresents the concentration of introduced oxygen-defect-inducingfactors (atoms/cm³). As shown in FIG. 7, it was observed that titaniumions which were oxygen-defect-inducing factors were introduced into theoxide semiconductor layer 420 at a concentration of about 1×10²⁰atoms/cm³ under three conditions of acceleration energy of 100 keV, 150keV, and 200 keV.

Thus, the introducing conditions of titanium ions for forming, in anoxide semiconductor layer, a source region and a drain region containingthe titanium ions at a concentration of greater than or equal to 1×10¹⁹atoms/cm³ and less than or equal to 1×10²¹ atoms/cm³ are a dose ofgreater than or equal to 1×10¹⁴ cm⁻² and less than or equal to 1×10¹⁶cm⁻² and an acceleration energy of greater than or equal to 100 keV andless than or equal to 200 keV.

Oxygen-defect-inducing factors may also be introduced into the channelformation region 413 in the oxide semiconductor layer 403. In that case,introducing treatment of oxygen-defect-inducing factors is performed onthe oxide semiconductor layer 420 before the gate electrode layer 401 isformed. The introducing treatment of oxygen-defect-inducing factors maybe performed before the oxide semiconductor film is processed into theisland-shaped oxide semiconductor layer. Oxygen-defect-inducing factorsare also introduced into the channel formation region 413 to reduce theresistance (for example, the channel formation region is made to have n⁻type conductivity) using oxygen defects as donors, whereby electriccharacteristics of the transistor can be controlled.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of oxygen-defect-inducing factors.

The concentration of oxygen-defect-inducing factors in the channelformation region 413 is lower than that in each of the source region 414a and the drain region 414 b. As in this embodiment, in the case wherethe concentration of oxygen-defect-inducing factors in each of thesource region 414 a and the drain region 414 b is greater than or equalto 1×10¹⁹ atoms/cm³ and less than or equal to 1×10²¹ atoms/cm³, theconcentration of oxygen-defect-inducing factors in the channel formationregion 413 may be, for example, less than 1×10¹⁴ atoms/cm³.

Next, the insulating layer 409 and the insulating layer 411 for coveringthe oxide semiconductor layer 403, the gate insulating layer 402, andthe gate electrode layer 401 are stacked.

As the insulating layer 409 and the insulating layer 411, an inorganicinsulating film such as an oxide insulating layer or a nitrideinsulating layer can be preferably used. As a formation method of theinsulating layer 409 and the insulating layer 411, a plasma CVD method,a sputtering method, or the like may be used.

The insulating layer 409 can be formed using an inorganic insulatingfilm typified by a silicon oxide film, a silicon oxynitride film, analuminum oxide film, or an aluminum oxynitride film.

The insulating layer 411 can be formed using an inorganic insulatingfilm such as a silicon nitride film, an aluminum nitride film, a siliconnitride oxide film, or an aluminum nitride oxide film.

A planarization insulating film may be formed over the insulating layer411 in order to reduce surface roughness caused by a transistor. Theplanarization insulating film can be formed using a heat-resistantorganic material such as polyimide, acrylic, benzocyclobutene,polyamide, or epoxy. Other than such organic materials, it is alsopossible to use a low-dielectric constant material (a low-k material), asiloxane-based resin, phosphosilicate glass (PSG), borophosphosilicateglass (BPSG), or the like. Note that the planarization insulating filmmay be formed by stacking a plurality of insulating films formed usingthese materials. There is no particular limitation on the method forforming the planarization insulating film. The planarization insulatingfilm can be formed, depending on the material, by a method such as asputtering method, an SOG method, a spin coating method, a dippingmethod, a spray coating method, or a droplet discharge method (e.g., anink-jet method, screen printing, or offset printing), or a tool such asa doctor knife, a roll coater, a curtain coater, or a knife coater.

Openings (contact holes) which reach the source region 414 a and thedrain region 414 b are formed in the insulating layer 409 and theinsulating layer 411. A conductive film is formed in the openings andthe conductive film is processed by etching, so that the sourceelectrode layer 405 a and the drain electrode layer 405 b which are incontact with and electrically connected to the source region 414 a andthe drain region 414 b, respectively are formed (see FIG. 1D). Throughthe above-described steps, the transistor 410 can be manufactured.

As the conductive film used for the source electrode layer 405 a and thedrain electrode layer 405 b, for example, a film of an element selectedfrom Al, Cr, Cu, Ta, Ti, Mo, and W, a film of an alloy containing any ofthese elements as a component, an alloy film containing these elementsin combination, or the like can be used. The conductive film may have astructure in which a high-melting-point metal layer of Cr, Ta, Ti, Mo,W, or the like is stacked over and/or below a metal layer of Al, Cu, orthe like. When an Al material to which an element which preventsgeneration of hillocks and whiskers in an Al film, such as Si, Ti, Ta,W, Mo, Cr, Nd, Sc, or Y, is added is used, heat resistance can beincreased. Alternatively, a conductive nitride material of the abovemetal, such as titanium nitride may be used. As a formation method ofthe conductive film, an evaporation method, a sputtering method, or thelike can be used.

The source electrode layer 405 a and the drain electrode layer 405 b mayhave a single-layer structure or a stacked-layer structure of two ormore layers. For example, a single-layer structure of an aluminum filmcontaining silicon, a two-layer structure in which a titanium film isstacked over an aluminum film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, and the like can be given.

Alternatively, the conductive film which serves as the source electrodelayer 405 a and the drain electrode layer 405 b (including a wiringformed using the same layer as the source electrode layer 405 a and thedrain electrode layer 405 b) may be formed using a conductive metaloxide. As the conductive metal oxide, indium oxide (In₂O₃), tin oxide(SnO₂), zinc oxide (ZnO), an alloy of indium oxide and tin oxide(In₂O₃—SnO₂, abbreviated to ITO), an alloy of indium oxide and zincoxide (In₂O₃—ZnO), or any of the metal oxide materials containingsilicon or silicon oxide can be used.

As described above, in the transistor 410 which includes an oxidesemiconductor including the source region 414 a and the drain region 414b the resistance of which is reduced by introducing theoxygen-defect-inducing factors, contact resistance between the oxidesemiconductor layer 403 and the source electrode layer 405 a and betweenthe oxide semiconductor layer 403 and the drain electrode layer 405 bcan be reduced; thus, on-state characteristics are improved. Thus, thetransistor can have good electric characteristics.

The transistor with good electric characteristics is capable ofhigh-speed response and high-speed operation. Thus, the semiconductordevice including the transistor can have high performance.

Embodiment 2

In this embodiment, one embodiment of a semiconductor device and amethod for manufacturing the semiconductor device will be described withreference to FIGS. 2A to 2D and FIGS. 3A to 3D. In this embodiment, atransistor will be described as an example of the semiconductor device.A structure in which regions containing oxygen-defect-inducing factorsat lower concentration than a source and drain regions are providedbetween a channel formation region and the source and drain regions inthe transistor described in Embodiment 1 will be described. Therefore,the same portions as in the above embodiment and portions havingfunctions similar to those of the portions in the above embodiment canbe formed in a manner similar to that of the above embodiment and stepssimilar to those in the above embodiment can be performed in a mannersimilar to that of the above embodiment, and the description thereof isnot repeated. In addition, detailed description of the same portions isnot given.

An example of a transistor and examples of methods for manufacturing thetransistor will be described with reference to FIGS. 2A to 2D and FIGS.3A to 3D.

A transistor illustrated 440 in FIG. 2D is a top-gate thin filmtransistor and is also called a planar thin film transistor.

The transistor 440 includes, over the substrate 400 having an insulatingsurface, an insulating layer 407; an oxide semiconductor layer 433 inwhich a channel formation region 413, regions 415 a and 415 b whichcontain oxygen-defect-inducing factors at low concentration(hereinafter, low-concentration-oxygen-defect-inducing-factor-containingregions 415 a and 415 b), a source region 414 a containingoxygen-defect-inducing factors, and a drain region 414 b containingoxygen-defect-inducing factors are provided, a gate insulating layer402; and a gate electrode layer 401.

An insulating layer 409 and an insulating layer 411 are stacked to coverthe oxide semiconductor layer 433, the gate insulating layer 402, andthe gate electrode layer 401. A source electrode layer 405 a and a drainelectrode layer 405 b are provided to be electrically connected to thesource region 414 a and the drain region 414 b, respectively, with theinsulating layer 409 and the insulating layer 411 interposedtherebetween.

The low-concentration-oxygen-defect-inducing-factor-containing regions415 a and 415 b, the source region 414 a, and the drain region 414 b areregions which contains oxygen-defect-inducing factors. The source region414 a and the drain region 414 b which contain oxygen-defect-inducingfactors at higher concentration than thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b can also be referred to ashigh-concentration-oxygen-defect-inducing-factor-containing regions.Therefore, in this specification, the source region 414 a and the drainregion 414 b which arehigh-concentration-oxygen-defect-inducing-factor-containing regions arealso referred to as first regions while thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b are also referred to as second regions.

The low-concentration-oxygen-defect-inducing-factor-containing regions415 a and 415 b, the source region 414 a, and the drain region 414 b arelow-resistance regions in which donors are formed byoxygen-defect-inducing factors. Thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b contain oxygen-defect-inducing factors at lower concentrationthan the source region 414 a and the drain region 414 b which arehigh-concentration-oxygen-defect-inducing-factor-containing regions, andthus have lower resistance than the source region and the drain region.

Therefore, in the oxide semiconductor layer 433 of the transistor 440,the resistance is lower in order of the channel formation region 413,the low-concentration-oxygen-defect-inducing-factor-containing regions415 a and 415 b, and the source and drain regions 414 a and 414 b.

A process of manufacturing the transistor 440 over the substrate 400will be described below with reference to FIGS. 2A to 2D.

As illustrated in FIG. 1B used in Embodiment 1, an island-shaped oxidesemiconductor layer 420, the gate insulating layer 402, and the gateelectrode layer 401 are formed over the substrate 400 provided with theinsulating layer 407 (see FIG. 2A).

Introducing treatment of oxygen-defect-inducing factors may also beperformed on a region which corresponds to the channel formation regionin the oxide semiconductor layer 420 (a region which overlaps with thegate electrode layer 401) so that oxygen-defect-inducing factors arecontained in the region. In that case, introducing treatment ofoxygen-defect-inducing factors is performed on the oxide semiconductorlayer 420 before the gate electrode layer 401 is formed. The introducingtreatment of oxygen-defect-inducing factors may be performed before theoxide semiconductor film is processed into the island-shaped oxidesemiconductor layer. Oxygen-defect-inducing factors are also introducedinto the channel formation region to reduce the resistance (for example,the channel formation region is made to have n⁻ type conductivity) usingoxygen defects as donors, whereby electric characteristics of thetransistor can be controlled.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of oxygen-defect-inducing factors.

Next, the insulating layer 409 for covering the oxide semiconductorlayer 420, the gate insulating layer 402, and the gate electrode layer401 are formed (see FIG. 2B).

Next, oxygen-defect-inducing factors 434 are introduced into the oxidesemiconductor layer 420, so that the oxide semiconductor layer 433including the low-concentration-oxygen-defect-inducing-factor-containingregions 415 a and 415 b, the source region 414 a, the drain region 414b, and the channel formation region 413 is formed (see FIG. 2C). Theconcentration of the oxygen-defect-inducing factors 434 in each of thesource region 414 a and the drain region 414 b may be, for example,greater than or equal to 1×10¹⁹ atoms/cm³ and less than or equal to1×10²¹ atoms/cm³. The concentration of the oxygen-defect-inducingfactors 434 in each of thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b may be lower than that in each of the source region 414 a andthe drain region 414 b and may be, for example, about 1×10¹⁸ atoms/cm³.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of the oxygen-defect-inducing factors 434.

As the oxygen-defect-inducing factors 434, one or more elements selectedfrom titanium (Ti), tungsten (W), molybdenum (Mo), aluminum (Al), cobalt(Co), zinc (Zn), indium (In), silicon (Si), and boron (B) can be used.In addition to the above oxygen-defect-inducing factors, hydrogen and/ornitrogen may be used. Note that metal elements with a high oxygenaffinity are preferably used as the oxygen-defect-inducing factors 434.

The oxygen-defect-inducing factors 434 are selectively introduced intothe oxide semiconductor layer 420, whereby oxygen defects areeffectively induced in the regions into which the oxygen-defect-inducingfactors 434 are introduced. The oxygen defects serve as donors; thus,the oxide semiconductor layer 433 including thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b, the source region 414 a, and the drain region 414 b theresistance of which is selectively reduced can be formed.

Further, a concentration distribution is provided in the region intowhich the oxygen-defect-inducing factors are introduced and thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b which have higher resistance than the source region and thedrain region and have lower resistance than the channel formation regionare formed between the high-resistance channel formation region and thelow-resistance source region and between the high-resistance channelformation region and the low-resistance drain region, so that the oxidesemiconductor layer 433 has a structure in which the conductivity variesfrom part to part. Thus, electric field concentration can be suppressedand a high electric field can be prevented from being locally applied,so that the withstand voltage of the transistor can be improved; thus, asemiconductor device can have high reliability.

In this embodiment, the gate electrode layer 401 is used as a mask inthe introducing treatment of the oxygen-defect-inducing factors 434.Thus, the oxygen-defect-inducing factors 434 are not introduced into aregion in the oxide semiconductor layer 433, which overlaps with thegate electrode layer 401, in a self-aligned manner and the regionbecomes the channel formation region 413; in contrast, theoxygen-defect-inducing factors 434 are introduced into a region whichdoes not overlap with the gate electrode layer 401, so that the sourceregion 414 a and the drain region 414 b are formed. In addition, partsof the insulating layer 409, which are provided on side surfaces of thegate electrode layer 401, also serve as masks; thus, introduction of theoxygen-defect-inducing factors 434 into regions of the oxidesemiconductor layer 420, which overlap with the gate electrode layer 401and parts of the insulating layer 409, which are provided on the sidesurfaces of the gate electrode layer 401, is blocked. Note that theoxygen-defect-inducing factors 434 introduced into the source and drainregions move to regions of the oxide semiconductor layer 420, whichoverlap with the parts of the insulating layer 409, which are providedon the side surfaces of the gate electrode layer 401 (i.e., a regionbetween the channel formation region 413 and the source region 414 a andthe drain region 414 b) to be introduced into the regions; thus, theregions become thelow-concentration-oxygen-defect-inducing-factor-containing-regions 415 aand 415 b.

The oxygen-defect-inducing factors 434 are introduced into the formedoxide semiconductor layer 420 by selectively using an ion implantationmethod or a doping method.

Note that, in some cases, oxygen-defect-inducing factors are containedeven in a region of an oxide semiconductor layer, which overlaps with amask (the gate electrode layer 401 in this embodiment), depending on theintroducing conditions (e.g., acceleration energy and the injectionamount or dose of oxygen-defect-inducing factors). Thus, the region intowhich oxygen-defect-inducing factors are introduced can be controlled bysetting introducing conditions and the thickness and size of a mask asappropriate.

As in this embodiment, in the case where the oxygen-defect-inducingfactors 434 which have passed through the insulating layer 409 andintroduced into the source region 414 a and the drain region 414 b moveto regions, and the regions become thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b, the width in the channel length direction of each of thelow-concentration-oxygen-defect-inducing-factor-containing region 415 aand 415 b (e.g., greater than or equal to 20 nm and less than or equalto 1 μm, typically greater than or equal to 20 nm and less than or equalto 200 nm) can be determined by adjusting the thickness of theinsulating layer 409 and the acceleration energy.

Although the example in which thelow-concentration-oxygen-defect-inducing-factor-containing region 415 aand 415 b, the source region 414 a, and the drain region 414 b areformed in a self-aligned manner by one introducing treatment ofoxygen-defect-inducing factors is described with reference to FIGS. 2Ato 2D, introducing treatment of oxygen-defect-inducing factors may beperformed plural times. An example in which introducing treatment ofoxygen-defect-inducing factors is performed twice will be described withreference to FIGS. 3A to 3D.

As in FIG. 2A, the island-shaped oxide semiconductor layer 420, the gateinsulating layer 402, and the gate electrode layer 401 are formed overthe substrate 400 provided with the insulating layer 407 (see FIG. 3A).

Next, oxygen-defect-inducing factors 430 are selectively introduced intothe oxide semiconductor layer 420, using the gate electrode layer 401 asa mask, so that the channel formation region 413 andoxygen-defect-inducing-factor-containing regions 431 a and 431 b areformed (see FIG. 3B). The concentration of the oxygen-defect-inducingfactors 430 in each of the oxygen-defect-inducing-factor-containingregions 431 a and 431 b may be, for example, about 1×10¹⁸ atoms/cm³.

Next, the insulating layer 409 for covering the oxide semiconductorlayer including the channel formation region 413 and theoxygen-defect-inducing-factor-containing regions 431 a and 431 b, thegate insulating layer 402, and the gate electrode layer 401 is formed.

Next, oxygen-defect-inducing factors 432 are introduced into theoxygen-defect-inducing-factor-containing regions 431 a and 431 b of theoxide semiconductor layer, so that the oxide semiconductor layer 433including the low-concentration-oxygen-defect-inducing-factor-containingregions 415 a and 415 b, the source region 414 a, the drain region 414b, and the channel formation region 413 is formed (see FIG. 3C). Theconcentration of the oxygen-defect-inducing factors 432 in each of thesource region 414 a and the drain region 414 b may be, for example,greater than or equal to 1×10¹⁹ atoms/cm³ and less than or equal to1×10²¹ atoms/cm³.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of oxygen-defect-inducing factors 432.

Further, parts of the insulating layer 409, which are provided on sidesurfaces of the gate electrode layer 401, also serve as masks; thus,introduction of the oxygen-defect-inducing factors 432 into regions ofthe oxide semiconductor layer 420, which overlap with the parts of theinsulating layer 409, which are provided on the side surfaces of thegate electrode layer 401, is blocked. Accordingly, the regions becomethe low-concentration-oxygen-defect-inducing-factor-containing regions415 a and 415 b.

As the oxygen-defect-inducing factors 430 and 432, a material similar tothat of the oxygen-defect-inducing factors 434 can be used.

Note that in the case where introducing treatment ofoxygen-defect-inducing factors is performed on the channel formationregion 413, the oxygen-defect-inducing factors are introduced so thatthe concentration thereof in the channel formation region 413 is lowerthan that in each of thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b, the source region 414 a, and the drain region 414 b. As inthis embodiment, in the case where the concentration ofoxygen-defect-inducing factors in each of the source region 414 a andthe drain region 414 b is greater than or equal to 1×10¹⁹ atoms/cm³ andless than or equal to 1×10²¹ atoms/cm³ and the concentration ofoxygen-defect-inducing factors in each of thelow-concentration-oxygen-defect-inducing-factor-containing regions 415 aand 415 b is about 1×10¹⁸ atoms/cm³, the concentration ofoxygen-defect-inducing factors in the channel formation region 413 maybe, for example, less than 1×10¹⁴ atoms/cm³.

After the introducing treatment illustrated in FIG. 3C, the insulatinglayer 411 is formed over the insulating layer 409. Openings (contactholes) which reach the source region 414 a and the drain region 414 bare formed in the insulating layer 409 and the insulating layer 411. Aconductive film is formed in the openings and the conductive film isprocessed by etching, so that the source electrode layer 405 a and thedrain electrode layer 405 b which are in contact with and electricallyconnected to the source region 414 a and the drain region 414 b,respectively are formed (see FIG. 3D). Through the above-describedsteps, the transistor 440 can be manufactured.

In the transistor 440 which includes the oxide semiconductor layer 433including the low-concentration-oxygen-defect-inducing-factor-containingregions 415 a and 415 b and the source region 414 a and the drain region414 b which are high-concentrationoxygen-defect-inducing-factor-containing regions the resistance of whichis reduced by introducing the oxygen-defect-inducing factors, contactresistance between the oxide semiconductor layer 433 and the sourceelectrode layer 405 a and between the oxide semiconductor layer 433 andthe drain electrode layer 405 b can be reduced; thus, on-statecharacteristics (e.g., on-state current or field-effect mobility) areimproved. Thus, the transistor can have good electric characteristics.

The transistor with good electric characteristics is capable ofhigh-speed response and high-speed operation. Thus, the semiconductordevice including the transistor can have high performance.

Furthermore, the oxide semiconductor layer in which the conductivityvaries from part to part is provided, whereby electric fieldconcentration of the transistor can be suppressed and a high electricfield can be prevented from being locally applied. Thus, the withstandvoltage of the transistor can be improved, which results in highreliability of the semiconductor device.

Embodiment 3

In this embodiment, another embodiment of a semiconductor device and amethod for manufacturing the semiconductor device will be described withreference to FIGS. 11A to 11D. In this embodiment, a transistor will bedescribed as an example of the semiconductor device. An example in whicha formation step and a structure of a source and drain electrode layersare different from those of the transistor described in Embodiment 1 or2 will be described. Therefore, the same portions as in the aboveembodiments and portions having functions similar to those of theportions in the above embodiments are formed in a manner similar to thatof the above embodiments and steps similar to those in the aboveembodiments can be performed in a manner similar to that of the aboveembodiments, and the description thereof is not repeated. In addition,detailed description of the same portions is not given.

In Embodiments 1 and 2, the example in which the source electrode layerand the drain electrode layer are formed over the insulating layersprovided over the oxide semiconductor layer and are electricallyconnected to the oxide semiconductor layer through the contact holesformed in the insulating layers is described. In this embodiment, incontrast, a source electrode layer and a drain electrode layer areformed directly on an oxide semiconductor layer without an insulatinglayer interposed therebetween.

An example of a transistor and a method for manufacturing the transistorwill be described with reference to FIGS. 11A to 11D.

A transistor 510 illustrated in FIG. 11D is a top-gate thin filmtransistor.

The transistor 510 includes, over a substrate 500 having an insulatingsurface, an insulating layer 507; an oxide semiconductor layer 503including a channel formation region 513, regions 511 a and 511 b intowhich oxygen-defect-inducing factors are not introduced (hereinafter,oxygen-defect-inducing-factor-non-introduced regions 511 a and 511 b), asource region 512 a containing oxygen-defect-inducing factors, a drainregion 512 b containing oxygen-defect-inducing factors; a first sourceelectrode layer 555 a; a first drain electrode layer 555 b; a secondsource electrode layer 545 a; a second drain electrode layer 545 b; agate insulating layer 502; and a gate electrode layer 501.

The source region 512 a and the drain region 512 b are formed in regionsin the oxide semiconductor layer 503, which are not covered with thegate electrode layer 501, the first source electrode layer 555 a, thefirst drain electrode layer 555 b, the second source electrode layer 545a, and the second drain electrode layer 545 b, and are formed in surfaceparts of the oxide semiconductor layer 503, which are covered with thefirst source electrode layer 555 a, the first drain electrode layer 555b, the second source electrode layer 545 a, and the second drainelectrode layer 545 b. The source region 512 a and the drain region 512b are low-resistance regions in which donors are formed byoxygen-defect-inducing factors 521.

On the other hand, in the oxide semiconductor layer 503, theoxygen-defect-inducing-factor-non-introduced regions 511 a and 511 b,which overlap with the first source electrode layer 555 a and the firstdrain electrode layer 555 b and are provided near an interface with theinsulating layer 507 do not contain the oxygen-defect-inducing factors521.

Note that the oxygen-defect-inducing factors 521 may also be introducedinto the channel formation region 513 in the oxide semiconductor layer503. In that case, introducing treatment of the oxygen-defect-inducingfactors 521 is performed on the oxide semiconductor layer 520 before thegate electrode layer 501 is formed. The introducing treatment of theoxygen-defect-inducing factors 521 may be performed before an oxidesemiconductor film is processed into an island-shaped oxidesemiconductor layer. In the case where the oxygen-defect-inducingfactors 521 are also introduced into the channel formation region 513,they are introduced into the entire oxide semiconductor layer 503; thus,the oxygen-defect-inducing factors 521 are also contained in theoxygen-defect-inducing-factor-non-introduced regions 511 a and 511 b atthe same concentration as those in the channel formation region.

The oxygen-defect-inducing factors 521 are also introduced into thechannel formation region 513 to reduce the resistance (for example, thechannel formation region 513 is made to have n⁻ type conductivity) usingoxygen defects as donors, whereby the electric characteristics of thetransistor can be controlled.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of the oxygen-defect-inducing factors 521.

The concentration of oxygen-defect-inducing factors in the channelformation region 513 is lower than that in each of the source region 512a and the drain region 512 b. As in this embodiment, in the case wherethe concentration of oxygen-defect-inducing factors in each of thesource region 512 a and the drain region 512 b is greater than or equalto 1×10¹⁹ atoms/cm³ and less than or equal to 1×10²¹ atoms/cm³, theconcentration of oxygen-defect-inducing factors in the channel formationregion 513 may be, for example, less than 1×10¹⁴ atoms/cm³.

A process of manufacturing the transistor 510 over the substrate 500will be described below with reference to FIGS. 11A to 11D.

The island-shaped oxide semiconductor layer 520 is provided over thesubstrate 500 provided with the insulating layer 507. A stack of thefirst source electrode layer 555 a and the second source electrode layer545 a is formed in contact with one of edge portions of the oxidesemiconductor layer 520, and a stack of the first drain electrode layer555 b and the second drain electrode layer 545 b is formed in contactwith the other edge portion of the oxide semiconductor layer 520.

A metal nitride layer is preferably used as the first source electrodelayer 555 a and the first drain electrode layer 555 b which are incontact with the oxide semiconductor layer 520, and a metal layer ispreferably used as the second source electrode layer 545 a and thesecond drain electrode layer 545 b. In this embodiment, a titaniumnitride film is used as the first source electrode layer 555 a and thefirst drain electrode layer 555 b, and a titanium film is used as thesecond source electrode layer 545 a and the second drain electrode layer545 b.

The first source electrode layer 555 a, the first drain electrode layer555 b, the second source electrode layer 545 a, and the second drainelectrode layer 545 b are thin conductive films.

The gate insulating layer 502 is formed over the oxide semiconductorlayer 520, the first source electrode layer 555 a, the first drainelectrode layer 555 b, the second source electrode layer 545 a, and thesecond drain electrode layer 545 b; and the gate electrode layer 501 isformed over the gate insulating layer 502 (see FIG. 11B).

Next, the oxygen-defect-inducing factors 521 are introduced into theoxide semiconductor layer 520, so that the oxide semiconductor layer 503including the source region 512 a, the drain region 512 b, the channelformation region 513, and theoxygen-defect-inducing-factor-non-introduced regions 511 a and 511 b isformed (see FIG. 11C). The concentration of the oxygen-defect-inducingfactors 521 in each of the source region 512 a and the drain region 512b may be, for example, greater than or equal to 1×10¹⁹ atoms/cm³ andless than or equal to 1×10²¹ atoms/cm³.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of the oxygen-defect-inducing factors 521.

As the oxygen-defect-inducing factors 521, one or more elements selectedfrom titanium (Ti), tungsten (W), molybdenum (Mo), aluminum (Al), cobalt(Co), zinc (Zn), indium (In), silicon (Si), and boron (B) can be used.In addition to the above oxygen-defect-inducing factors 521, hydrogenand/or nitrogen may be used. Note that metal elements with a high oxygenaffinity are preferably used as the oxygen-defect-inducing factors 521.

The oxygen-defect-inducing factors 521 are selectively introduced intothe oxide semiconductor layer 520, whereby oxygen defects areeffectively induced in the regions into which the oxygen-defect-inducingfactors 521 are introduced. The oxygen defects serve as donors; thus,the oxide semiconductor layer 503 including the source region 512 a andthe drain region 512 b the resistance of which is selectively reducedcan be formed.

In this embodiment, the oxygen-defect-inducing factors 521 areintroduced into the oxide semiconductor layer 520, using the gateelectrode layer 501 as a mask. The oxygen-defect-inducing factors 521pass through the gate insulating layer 502, the first source electrodelayer 555 a, the first drain electrode layer 555 b, the second sourceelectrode layer 545 a, and the second drain electrode layer 545 b to beintroduced into the oxide semiconductor layer 520.

The oxygen-defect-inducing factors 521 are not introduced into a regionwhich overlaps with the gate electrode layer 501, and the region becomesthe channel formation region 513.

The first source electrode layer 555 a, the first drain electrode layer555 b, the second source electrode layer 545 a, and the second drainelectrode layer 545 b are thin conductive films and introducingconditions of the oxygen-defect-inducing factors 521 are controlled,whereby the oxygen-defect-inducing factors 521 can pass through thefirst source electrode layer 555 a, the first drain electrode layer 555b, the second source electrode layer 545 a, and the second drainelectrode layer 545 b to be introduced into regions near interfaces withthe oxide semiconductor layer 520. Thus, as illustrated in FIG. 11C, thesource region 512 a and the drain region 512 b which contain theoxygen-defect-inducing factors 521 can also be formed near theinterfaces between the oxide semiconductor layer 503 and the firstsource electrode layer 555 a and between the oxide semiconductor layer503 and the first drain electrode layer 555 b. Thus, the oxidesemiconductor layer 503 can be connected to the first source electrodelayer 555 a or the first drain electrode layer 555 b through the sourceregion 512 a or the drain region 512 b which has low resistance.

Meanwhile, in parts of the oxide semiconductor layer 503, which overlapwith the first source electrode layer 555 a and the first drainelectrode layer 555 b, the oxygen-defect-inducing-factor-non-introducedregions 511 a and 511 b, i.e., regions into which theoxygen-defect-inducing factors 521 are not introduced are formed nearinterfaces with the insulating layer 507. The oxygen-defect-inducingfactors introduced through the introducing treatment are not containedin the oxygen-defect-inducing-factor-non-introduced regions 511 a and511 b and the channel formation region 513.

Through the above-described steps, the transistor 510 can bemanufactured.

In the transistor 510 which includes the oxide semiconductor layer 503including the source region 512 a and the drain region 512 b theresistance of which is reduced by introducing the oxygen-defect-inducingfactors 521, contact resistance between the oxide semiconductor layer503 and the first source electrode layer 555 a and between the oxidesemiconductor layer 503 and the first drain electrode layer 555 b can bereduced; thus, on-state characteristics (e.g., on-state current orfield-effect mobility) are improved. Thus, a transistor with goodelectric characteristics can be obtained.

The transistor with good electric characteristics is capable ofhigh-speed response and high-speed operation. Thus, the semiconductordevice including the transistor can have high performance.

Alternatively, as in Embodiment 2, a structure in which regionscontaining oxygen-defect-inducing factors at lower concentration thanthe source region and the drain region are provided between the channelformation region and the source and drain regions may be employed.

The oxide semiconductor layer in which the conductivity varies from partto part is provided, whereby electric field concentration of thetransistor can be suppressed and a high electric field can be preventedfrom being locally applied. Thus, the withstand voltage of thetransistor can be improved, which results in high reliability of thesemiconductor device.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 4

In this embodiment, examples of transistors each including an oxidesemiconductor layer and methods for manufacturing the transistors willbe described in detail below with reference to FIGS. 12A to 12E andFIGS. 13A to 13C. The same portions as in the above embodiments andportions having functions similar to those of the portions in the aboveembodiments are formed in a manner similar to that of the aboveembodiments and steps similar to those in the above embodiments can beperformed in a manner similar to that of the above embodiments, and thedescription thereof is not repeated. In addition, detailed descriptionof the same portions is not given.

Examples of cross-sectional structures of transistors are illustrated inFIGS. 12A to 12E and FIGS. 13A to 13C. A transistor 640 illustrated inFIG. 12E and a transistor 650 illustrated in FIG. 13C are top-gate thinfilm transistors which are similar to the transistor 510 illustrated inFIG. 11D.

An oxide semiconductor layer in this embodiment is made to be intrinsic(i-type) or substantially intrinsic by removing hydrogen which is ann-type impurity from the oxide semiconductor layer and increasing thepurity so that impurities that are not main components of the oxidesemiconductor layer are not contained as much as possible, beforeintroducing oxygen-defect-inducing factors. In other words, purifiedintrinsic (i-type) semiconductor or a semiconductor close thereto isobtained by removing impurities such as hydrogen or water as much aspossible.

Further, a very small number of (close to zero) carriers are containedin the above purified oxide semiconductor, and the carrier concentrationis less than 1×10¹⁴/cm³, preferably less than 1×10¹²/cm³, morepreferably less than 1×10¹¹/cm³.

Since a very small number of carriers are contained in the oxidesemiconductor layer, off-state current can be reduced. It is preferablethat off-state current be as low as possible.

Specifically, the off-state current per micrometer of channel width ofthe transistor including the above oxide semiconductor layer can be lessthan or equal to 1×10⁴ zA/μm (1×10⁻¹⁷ A/μm) and, furthermore, less thanor equal to 1×10³ zA/μm (1×10⁻¹⁸ A/μm).

Note that the resistance to flow of off-state current in a transistorcan be referred to as off-state resistivity. The off-state resistivityis the resistivity of a channel formation region at the time when thetransistor is off, which can be calculated from off-state current.

The off-state resistivity of the transistor which includes the oxidesemiconductor layer of this embodiment is preferably greater than orequal to 1×10⁹ Ω·m, more preferably greater than or equal to 1×10¹⁰ Ω·m.

Further, the temperature dependence of on-state current can hardly beobserved and the off-state current remains very low in the transistors640 and 650 each including the above oxide semiconductor layer.

A process of manufacturing the transistor 640 over a substrate 600having an insulating surface will be described below with reference toFIGS. 12A to 12E.

As the substrate 600, a substrate similar to the substrate 400 describedin Embodiment 1 can be used. In this embodiment, a glass substrate isused as the substrate 600.

An insulating layer 607 which serves as a base film is formed over thesubstrate 600. It is preferable that the insulating layer 607 which isin contact with an oxide semiconductor layer 620 be formed using anoxide insulating layer such as a silicon oxide layer, a siliconoxynitride layer, an aluminum oxide layer, or an aluminum oxynitridelayer. The insulating layer 607 can be formed by a plasma CVD method, asputtering method, or the like. In order to prevent the insulating layer607 from containing hydrogen, the insulating layer 607 is preferablyformed by a sputtering method.

In this embodiment, as the insulating layer 607, a silicon oxide layeris formed by a sputtering method. The silicon oxide layer is formed asthe insulating layer 607 over the substrate 600 in such a manner thatthe substrate 600 is transferred to a treatment chamber, a sputteringgas which contains high-purity oxygen and from which hydrogen andmoisture have been removed is introduced, and a silicon semiconductortarget is used. The substrate 600 may be at room temperature or may beheated.

For example, a silicon oxide film is deposited by an RF sputteringmethod under the following conditions: quartz (preferably syntheticquartz) is used, the substrate temperature is 108° C., the distancebetween the substrate and a target (the T-S distance) is 60 mm, thepressure is 0.4 Pa, the high-frequency power is 1.5 kW, and theatmosphere contains oxygen and argon (the flow ratio of oxygen to argonis 1:1 (each flow rate is 25 sccm)). The thickness of the silicon oxidefilm is 100 nm. Note that instead of quartz (preferably syntheticquartz), a silicon target can be used as a target used for forming thesilicon oxide film. As a sputtering gas, oxygen or a mixed gas of oxygenand argon is used.

In that case, it is preferable that the insulating layer 607 be formedwhile moisture which remains in the treatment chamber is removed so thathydrogen, a hydroxyl group, or moisture is prevented from beingcontained in the insulating layer 607.

In order to remove moisture which remains in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. From thetreatment chamber which is evacuated with a cryopump, a hydrogen atom, acompound containing a hydrogen atom, such as water (H₂O), and the likeare removed; thus, the concentration of impurities in the insulatinglayer 607 formed in the treatment chamber can be reduced.

The insulating layer 607 may have a stacked-layer structure in which,for example, a nitride insulating layer such as a silicon nitride layer,a silicon nitride oxide layer, an aluminum nitride layer, or an aluminumnitride oxide layer and the above oxide insulating layer are stacked inthis order over the substrate 600.

For example, a silicon nitride layer is formed using a silicon target byintroducing a sputtering gas which contains high-purity nitrogen andfrom which hydrogen and moisture have been removed, to a space betweenthe silicon oxide layer and the substrate. In this case also, it ispreferable that the silicon nitride layer be formed while moisture whichremains in the treatment chamber is removed in a manner similar to thatof the silicon oxide layer. Also in the case where the silicon nitridelayer is formed, the substrate may be heated at the time of deposition.

In the case where a silicon nitride layer and a silicon oxide layer arestacked to form the insulating layer 607, the silicon nitride layer andthe silicon oxide layer can be formed in the same treatment chamber withthe use of the same silicon target. First, a sputtering gas containingnitrogen is introduced into the treatment chamber and a silicon nitridelayer is formed using a silicon target provided in the treatmentchamber, and then the sputtering gas is switched to a sputtering gascontaining oxygen and a silicon oxide layer is formed using the samesilicon target. Since the silicon nitride layer and the silicon oxidelayer can be formed in succession without being exposed to air,impurities such as hydrogen or moisture can be prevented from beingadsorbed on a surface of the silicon nitride layer.

Next, over the insulating layer 607, an oxide semiconductor film isformed to a thickness of greater than or equal to 2 nm and less than orequal to 200 nm, preferably greater than or equal to 5 nm and less thanor equal to 30 nm.

Note that before the oxide semiconductor film is formed by a sputteringmethod, powdery substances (also referred to as particles or dust)attached to a surface of the insulating layer 607 are preferably removedby reverse sputtering in which plasma is generated by introduction of anargon gas. The reverse sputtering is a method in which voltage isapplied to a substrate side, not to a target side, using an RF powersource in an argon atmosphere and plasma is generated in the vicinity ofthe substrate so that a substrate surface is modified. Note that insteadof an argon atmosphere, a nitrogen atmosphere, a helium atmosphere, anoxygen atmosphere, or the like may be used.

As an oxide semiconductor used for the oxide semiconductor film, anIn—Sn—Ga—Zn—O-based oxide semiconductor which is a four-component metaloxide; an In—Ga—Zn—O-based oxide semiconductor, an In—Sn—Zn—O-basedoxide semiconductor, an In—Al—Zn—O-based oxide semiconductor, aSn—Ga—Zn—O-based oxide semiconductor, an Al—Ga—Zn—O-based oxidesemiconductor, or a Sn—Al—Zn—O-based oxide semiconductor which arethree-component metal oxides; an In—Zn—O-based oxide semiconductor, aSn—Zn—O-based oxide semiconductor, an Al—Zn—O-based oxide semiconductor,a Zn—Mg—O-based oxide semiconductor, a Sn—Mg—O-based oxidesemiconductor, an In—Mg—O-based oxide semiconductor which aretwo-component metal oxides; an In—O-based oxide semiconductor, aSn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor canbe used. The above oxide semiconductor film may contain SiO₂. In thisembodiment, the oxide semiconductor film is formed by a sputteringmethod with the use of an In—Ga—Zn—O-based oxide semiconductor target.In addition, the oxide semiconductor film can be formed by a sputteringmethod in a rare gas (typically argon) atmosphere, an oxygen atmosphere,or an atmosphere of a rare gas (typically argon) and oxygen.

As a target for forming the oxide semiconductor film by a sputteringmethod, for example, a target having a composition ratio of In₂O₃ toGa₂O₃ and ZnO of 1:1:1 [molar ratio] (i.e., In:Ga:Zn=1:1:0.5 [atomicratio]) can be used. Alternatively, a target having a composition ratioof In to Ga and Zn of 1:1:1 [atomic ratio] or a composition ratio of Into Ga and Zn of 1:1:2 [atomic ratio] may be used. The filling rate ofthe metal oxide target is greater than or equal to 90% and less than orequal to 100%, preferably greater than or equal to 95% and less than orequal to 99.9%. An oxide semiconductor film which is formed using anoxide semiconductor target for film formation, which has a high fillingrate, is dense.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, hydroxyl, or hydride have been removed be used as asputtering gas used for forming the oxide semiconductor film.

The substrate is held in a treatment chamber kept under reducedpressure, and the substrate temperature is set to a temperature higherthan or equal to 100° C. and lower than or equal to 600° C., preferablya temperature higher than or equal to 200° C. and lower than or equal to400° C. Film formation is performed while the substrate is heated,whereby the concentration of impurities contained in the formed oxidesemiconductor film can be reduced. In addition, damage due to sputteringcan be reduced. Then, a sputtering gas from which hydrogen and moisturehave been removed is introduced into the treatment chamber whilemoisture which remains therein is removed, and the oxide semiconductorfilm is formed over the substrate 600 with the use of the above target.In order to remove moisture which remains in the treatment chamber, anentrapment vacuum pump such as a cryopump is preferably used. From thetreatment chamber which is evacuated with a cryopump, hydrogen, acompound containing a hydrogen atom, such as water (H₂O) (preferablyalso a compound containing a carbon atom), and the like are removed,whereby the concentration of impurities in the oxide semiconductor filmformed in the treatment chamber can be reduced.

As an example of the deposition condition, the following conditions areemployed: the distance between the substrate and the target is 100 mm,the pressure is 0.6 Pa, the direct-current (DC) power is 0.5 kW, and theatmosphere is an oxygen atmosphere (the proportion of oxygen flow:100%). Note that a pulsed direct-current (DC) power source is preferablyused, in which case powder substances (also referred to as particles ordust) that are generated in deposition can be reduced and the filmthickness can be uniform. Note that the appropriate thickness of theoxide semiconductor film varies depending on the oxide semiconductormaterial, and the thickness may be determined as appropriate dependingon the material.

Next, the oxide semiconductor film is processed into the island-shapeoxide semiconductor layer 620 in a photolithography step. A resist maskfor forming the island-shaped oxide semiconductor layer 620 may beformed by an ink-jet method. Formation of the resist mask by an ink-jetmethod needs no photomask; thus, the manufacturing cost can be reduced.

Note that the etching of the oxide semiconductor film may be dryetching, wet etching, or both dry etching and wet etching.

As an etching gas for dry etching, a gas containing chlorine(chlorine-based gas such as chlorine (Cl₂), boron trichloride (BCl₃),silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄)) ispreferably used.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr);oxygen (O₂); any of these gases to which a rare gas such as helium (He)or argon (Ar) is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the film into a desired shape, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, an ammonia peroxide mixture (ratio ofhydrogen peroxide water of 31 wt % to ammonia water of 28 wt % and wateris 5:2:2), or the like can be used. Alternatively, ITO07N (produced byKANTO CHEMICAL CO., INC.) may also be used.

The etchant after the wet etching is removed together with the etchedmaterials by cleaning. The waste liquid including the etchant and thematerial etched off may be purified and the material may be reused. Whena material such as indium contained in the oxide semiconductor layer iscollected from the waste liquid after the etching and reused, theresources can be efficiently used and the cost can be reduced.

The etching conditions (such as an etchant, etching time, andtemperature) are adjusted as appropriate depending on the material sothat the oxide semiconductor film can be etched into a desired shape.

Next, first heat treatment is performed on the oxide semiconductor layer620. The oxide semiconductor layer 620 can be dehydrated ordehydrogenated by the first heat treatment. The temperature of the firstheat treatment is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 400° C. and lowerthan the strain point of the substrate.

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may include a device for heating an object to be processedby heat conduction or heat radiation from a heating element such as aresistance heating element. For example, an RTA (rapid thermal anneal)apparatus such as a GRTA (gas rapid thermal anneal) apparatus or an LRTA(lamp rapid thermal anneal) apparatus can be used. An LRTA apparatus isan apparatus for heating an object to be processed by radiation of light(an electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas which does not react with an object to be processed by heattreatment, such as nitrogen or a rare gas such as argon is used.

For example, as the first heat treatment, GRTA may be performed asfollows: the substrate is transferred and put in an inert gas heated toa temperature as high as 650° C. to 700° C., heated for several minutes,and is transferred and taken out of the inert gas which has been heatedto the high temperature. GRTA enables high-temperature heat treatment ina short time.

Note that it is preferable that in the first heat treatment, water,hydrogen, and the like be not contained in a rare gas such as helium,neon, or argon. It is preferable that the purity of nitrogen or the raregas such as helium, neon, or argon which is introduced into a heattreatment apparatus be set to be 6N (99.9999%) or higher, preferably 7N(99.99999%) or higher (that is, the impurity concentration is 1 ppm orlower, preferably 0.1 ppm or lower).

As heat treatment for dehydration or dehydrogenation, the oxidesemiconductor layer may be heated, and cooling may be performed byintroducing a high-purity oxygen gas, a high-purity N₂O gas, orultra-dry air (having a dew point of −40° C. or lower, preferably −60°C. or lower) into the same furnace. It is preferable that the oxygen gasor the N₂O gas do not contain water, hydrogen, and the like.Alternatively, the purity of an oxygen gas or an N₂O gas which isintroduced into the heat treatment apparatus is preferably 6N (99.9999%)or higher, more preferably 7N (99.99999%) or higher (that is, theimpurity concentration of the oxygen gas or the N₂O gas is 1 ppm orlower, preferably 0.1 ppm or lower). By supplying oxygen which is a maincomponent for forming an oxide semiconductor and has been reducedbecause of the step of removing impurities through the dehydration orthe dehydrogenation, the purity of the oxide semiconductor layer 620 isincreased and the oxide semiconductor layer 620 is made to beelectrically i-type (intrinsic).

In this embodiment, the substrate 600 is put in an electric furnace thatis a kind of heat treatment apparatus and first heat treatment isperformed on the oxide semiconductor layer at 450° C. in a nitrogenatmosphere for one hour, and then water and hydrogen are prevented fromentering the oxide semiconductor layer with the oxide semiconductorlayer not exposed to air; thus, the oxide semiconductor layer 620 isobtained. In the case where the heat treatment for dehydration ordehydrogenation is performed in an atmosphere of an inert gas such asnitrogen or a rare gas as described above, the oxide semiconductor layer620 after being subjected to the heat treatment has n-type conductivityand the resistance thereof is reduced because of oxygen defects.

Further, depending on the conditions of the first heat treatment or thematerial for the oxide semiconductor layer, the oxide semiconductorlayer 620 might be crystallized to be a microcrystalline film or apolycrystalline film. Further, depending on the conditions of the firstheat treatment and the material for the oxide semiconductor film, theoxide semiconductor film might become an amorphous oxide semiconductorfilm containing no crystalline components.

The first heat treatment can be performed on the oxide semiconductorfilm before being processed into the island-like oxide semiconductorlayer 620. In that case, the substrate is taken out of the heatingapparatus after the first heat treatment, and then a photolithographystep is performed.

The transistor 640 and the transistor 650 in each of which regions whichcontain oxygen-defect-inducing factors at lower concentration than asource region and a drain region with the use of the oxide semiconductorlayer 620 are provided between a channel formation region and a sourceregion and between a channel formation region and a drain region will bedescribed with reference to FIGS. 12A to 12E and FIGS. 13A to 13C,respectively.

The oxide semiconductor layer 620 is formed over the substrate 600having an insulating surface and being provided with the insulatinglayer 607 (see FIG. 12A).

A stack of a first source electrode layer 625 a and a second sourceelectrode layer 635 a is formed in contact with one of edge portions ofthe oxide semiconductor layer 620, and a stack of a first drainelectrode layer 625 b and a second drain electrode layer 635 b is formedin contact with the other edge portion of the oxide semiconductor layer620.

A metal nitride layer is preferably used as the first source electrodelayer 625 a and the first drain electrode layer 625 b which are incontact with the oxide semiconductor layer 620, and a metal layer ispreferably used as the second source electrode layer 635 a and thesecond drain electrode layer 635 b. In this embodiment, a titaniumnitride film is used as the first source electrode layer 625 a and thefirst drain electrode layer 625 b, and a stack of an aluminum film and atitanium film is used as the second source electrode layer 635 a and thesecond drain electrode layer 635 b.

A gate insulating layer 602 is formed over the oxide semiconductor layer620, the first source electrode layer 625 a, the first drain electrodelayer 625 b, the second source electrode layer 635 a, and the seconddrain electrode layer 635 b.

The insulating layer 602 can be formed to have a thickness of at least 1nm using a method by which impurities such as water or hydrogen areprevented from entering the insulating layer 602 such as a sputteringmethod, as appropriate.

In this embodiment, as the gate insulating layer 602, a silicon oxidefilm is formed to a thickness of 100 nm by a sputtering method. Thesubstrate temperature in the film formation may be higher than or equalto room temperature and lower than or equal to 300° C., and is 100° C.in this embodiment. The formation of the silicon oxide film by asputtering method can be performed in an atmosphere of a rare gas(typically, argon), an oxygen atmosphere, or an atmosphere containingoxygen and a rare gas (typically, argon). As a target, a silicon oxidetarget or a silicon target can be used. For example, the silicon oxidefilm can be formed by a sputtering method with the use of a silicontarget in an atmosphere containing oxygen and nitrogen. As the gateinsulating layer 602 which is formed in contact with the oxidesemiconductor layer 620, an inorganic insulating film which does notcontain impurities such as moisture, a hydrogen ion, or OH⁻ and blocksentry of these from the outside is used. Typically, a silicon oxidefilm, a silicon oxynitride film, an aluminum oxide film, an aluminumoxynitride film, or the like is used.

In that case, it is preferable that the insulating layer 602 be formedwhile moisture which remains in the treatment chamber is removed so thathydrogen, a hydroxyl group, or moisture is prevented from beingcontained in the oxide semiconductor layer 620 and the insulating layer602.

In order to remove moisture which remains in the treatment chamber, anentrapment vacuum pump such as a cryopump is preferably used. From thetreatment chamber which is evacuated with a cryopump, hydrogen, acompound containing a hydrogen atom, such as water (H₂O), and the likeare removed, whereby the concentration of impurities in the gateinsulating layer 602 formed in the treatment chamber can be reduced.

Next, second heat treatment (for example, at a temperature higher thanor equal to 200° C. and lower than or equal to 400° C., preferably atemperature higher than or equal to 250° C. and lower than or equal to350° C.) is performed in an inert gas atmosphere or an oxygen gasatmosphere. For example, the second heat treatment is performed at 250°C. in a nitrogen atmosphere for one hour. When the second heat treatmentis performed, heat is applied while part of the oxide semiconductorlayer (at least the channel formation region is included) is in contactwith the gate insulating layer 602.

Through the above-described steps, by performing heat treatment fordehydration or dehydrogenation on the oxide semiconductor layer afterdeposition, impurities such as hydrogen, moisture, a hydroxyl group, orhydride (also referred to as a hydrogen compound) can be intentionallyremoved from the oxide semiconductor layer, and additionally, oxygenwhich is a main component of an oxide semiconductor and is reduced inthe step of removing impurities can be supplied. Accordingly, part ofthe oxide semiconductor layer which includes at least the channelformation region is purified and is made to be electrically i-type(intrinsic).

In this embodiment, oxygen is not supplied to a region in the oxidesemiconductor layer 620, which is not directly in contact with the gateinsulating layer 602 and overlaps with the first source electrode layer625 a or the first drain electrode layer 625 b; thus, the resistance ofthe region is kept low.

A gate electrode layer 601 is formed over the gate insulating layer 602(see FIG. 12B).

Note that introducing treatment of oxygen-defect-inducing factors mayalso be performed on a region in the oxide semiconductor layer 620,which corresponds to the channel formation region (i.e., a region whichoverlaps with the gate electrode layer 601) so that theoxygen-defect-inducing factors are contained in the region. In thatcase, introducing treatment of oxygen-defect-inducing factors isperformed on the oxide semiconductor layer 620 before formation of thegate electrode layer 601. The introducing treatment ofoxygen-defect-inducing factors may be performed before the oxidesemiconductor film is processed into the island-shaped oxidesemiconductor layer. Oxygen-defect-inducing factors are also introducedinto the channel formation region to reduce the resistance (for example,the channel formation region is made to have n⁻ type conductivity) usingoxygen defects as donors, whereby electric characteristics of thetransistor can be controlled.

Heat treatment (for example, at a temperature higher than or equal to200° C. and lower than or equal to 600° C.) may be performed after theintroducing treatment of oxygen-defect-inducing factors. The introducingtreatment of oxygen-defect-inducing factors is preferably performedbefore the first heat treatment, in which case the heat treatment canalso serve as the first heat treatment. For example, by performingintroducing treatment of oxygen-defect-inducing factors and heattreatment at a temperature higher than or equal to 200° C. and lowerthan or equal to 600° C. in a nitrogen atmosphere, the resistance of theintrinsic oxide semiconductor layer can be reduced (the intrinsic oxidesemiconductor layer can be made to have n-type conductivity).

The oxide semiconductor layer 620 in this embodiment is a purified oxidesemiconductor layer; thus, introduction of introducingoxygen-defect-inducing factors has a great effect on the oxidesemiconductor layer 620. Thus, even when the amount ofoxygen-defect-inducing factors in the oxide semiconductor layer 620 issmall, electric characteristics of the transistor can be effectivelycontrolled.

Next, oxygen-defect-inducing factors 630 are selectively introduced intothe oxide semiconductor layer 620 using the gate electrode layer 601,the first source electrode layer 625 a, the first drain electrode layer625 b, the second source electrode layer 635 a, and the second drainelectrode layer 635 b as masks, so that a channel formation region 613,oxygen-defect-inducing-factor-containing regions 631 a and 631 b, andoxygen-defect-inducing-factor-non-introduced regions 611 a and 611 b areformed (see FIG. 12C). The concentration of the oxygen-defect-inducingfactors 630 in each of the oxygen-defect-inducing-factor-containingregions 631 a and 631 b may be, for example, about 1×10¹⁸ atoms/cm³.

The oxygen-defect-inducing factors 630 are selectively introduced intothe oxide semiconductor layer 620, whereby oxygen defects areeffectively induced in the regions into which the oxygen-defect-inducingfactors 630 are introduced. The oxygen defects serve as donors; thus,the oxide semiconductor layer including theoxygen-defect-inducing-factor-containing regions 631 a and 631 b theresistance of which is selectively reduced can be formed.

The oxygen-defect-inducing factors 630 are not introduced into a regionwhich overlaps with the gate electrode layer 601 and the region becomesthe channel formation region 613.

The oxygen-defect-inducing factors 630 are not introduced into theoxygen-defect-inducing-factor-non-introduced regions 611 a and 611 b.However, the regions 611 a and 611 b are made to have n-typeconductivity by the first heat treatment for dehydration ordehydrogenation in an atmosphere of an inert gas such as nitrogen or arare gas, and thus are n-type low-resistance regions. Thus, the oxidesemiconductor layer can be connected to the first source electrode layer625 a or the first drain electrode layer 625 b through the n-typelow-resistance region.

Next, an insulating layer 609 for covering the oxide semiconductor layerincluding the channel formation region 613, theoxygen-defect-inducing-factor-containing regions 631 a and 631 b, andthe oxygen-defect-inducing-factor-non-introduced regions 611 a and 611b; the first source electrode layer 625 a; the first drain electrodelayer 625 b; the second source electrode layer 635 a; the second drainelectrode layer 635 b; the gate insulating layer 602; and the gateelectrode layer 601 is formed.

Next, oxygen-defect-inducing factors 632 are introduced into theoxygen-defect-inducing-factor-containing regions 631 a and 631 b in theoxide semiconductor layer, so that an oxide semiconductor layer 633including low-concentration-oxygen-defect-inducing-factor-containingregions 615 a and 615 b, a source region 614 a, a drain region 614 b,the channel formation region 613, and theoxygen-defect-inducing-factor-non-introduced regions 611 a and 611 b isformed (see FIG. 12D). The concentration of the oxygen-defect-inducingfactors 632 in each of the source region 614 a and the drain region 614b may be, for example, greater than or equal to 1×10¹⁹ atoms/cm³ andless than or equal to 1×10²¹ atoms/cm³.

Since parts of the insulating layer 609, which are provided on sidesurfaces of the gate electrode layer 601 also serve as masks,introduction of the oxygen-defect-inducing factors 632 into part of theoxide semiconductor layer 620, which overlaps with the gate electrodelayer 601 and the parts of the insulating layer 609, which are providedon the side surfaces of the gate electrode layer 601, is blocked.Accordingly, these parts of the oxide semiconductor layer 620 become thelow-concentration-oxygen-defect-inducing-factor-containing regions 615 aand 615 b. In particular, in this embodiment, the gate electrode layer601 is thick; thus, introduction of the oxygen-defect-inducing factors632 into the oxide semiconductor layer 620 is blocked more.

Note that in the case where introducing treatment ofoxygen-defect-inducing factors is performed on the channel formationregion 613, the oxygen-defect-inducing factors are introduced so thatthe concentration thereof in the channel formation region 613 is lowerthan that in each of thelow-concentration-oxygen-defect-inducing-factor-containing regions 615 aand 615 b, the source region 614 a, and the drain region 614 b. As inthis embodiment, in the case where the concentration ofoxygen-defect-inducing factors in each of the source region 614 a andthe drain region 614 b is greater than or equal to 1×10¹⁹ atoms/cm³ andless than or equal to 1×10²¹ atoms/cm³ and the concentration ofoxygen-defect-inducing factors in each of thelow-concentration-oxygen-defect-inducing-factor-containing regions 615 aand 615 b is about 1×10¹⁸ atoms/cm³, the concentration ofoxygen-defect-inducing factors in the channel formation region 613 maybe, for example, less than 1×10¹⁴ atoms/cm³.

Through the above-described steps, the transistor 640 can bemanufactured (see FIG. 12E).

In the transistor 650 illustrated in FIG. 13C, a region of a gateinsulating layer, which does not overlap with the gate electrode layer601 is removed, and an island-shaped gate insulating layer 604 isformed. Accordingly, the insulating layer 609 is provided in contactwith the low-concentration-oxygen-defect-inducing-factor-containingregions 615 a and 615 b, the source region 614 a, and the drain region614 b which are included in the oxide semiconductor layer 633; the firstsource electrode layer 625 a; the first drain electrode layer 625 b; thesecond source electrode layer 635 a; the second drain electrode layer635 b; and the gate electrode layer 601.

In a manner similar to that of the transistor 640, after the stepillustrated in FIG. 12C, the gate insulating layer is etched using thegate electrode layer 601 as a mask, so that the island-shaped gateinsulating layer 604 is formed (see FIG. 13A).

Note that the gate insulating layer may be etched before introducingtreatment of oxygen-defect-inducing factors for forming theoxygen-defect-inducing-factor-containing regions 631 a and 631 b. Inthat case, oxygen-defect-inducing factors are directly introduced intopart of the oxide semiconductor layer 620, which is exposed.

Next, the insulating layer 609 for covering the oxide semiconductorlayer including the channel formation region 613, theoxygen-defect-inducing-factor-containing regions 631 a and 631 b, andthe oxygen-defect-inducing-factor-non-introduced regions 611 a and 611b; the first source electrode layer 625 a; the first drain electrodelayer 625 b; the second source electrode layer 635 a; the second drainelectrode layer 635 b; the gate insulating layer 604; and the gateelectrode layer 601 is formed. Since parts of the gate insulating layer,which are positioned over the oxygen-defect-inducing-factor-containingregions 631 a and 631 b in the oxide semiconductor layer 633 are removedin FIG. 13A, the insulating layer 609 is formed in contact with theexposed oxygen-defect-inducing-factor-containing regions 631 a and 631b.

Next, oxygen-defect-inducing factors 636 are introduced into theoxygen-defect-inducing-factor-containing regions 631 a and 631 b in theoxide semiconductor layer, so that the oxide semiconductor layer 633including the low-concentration-oxygen-defect-inducing-factor-containingregions 615 a and 615 b, the source region 614 a, the drain region 614b, the channel formation region 613, and theoxygen-defect-inducing-factor-non-introduced regions 611 a and 611 b isformed (see FIG. 13B). The concentration of the oxygen-defect-inducingfactors 636 in each of the source region 614 a and the drain region 614b may be, for example, greater than or equal to 1×10¹⁹ atoms/cm³ andless than or equal to 1×10²¹ atoms/cm³.

Since parts of the insulating layer 609, which are provided on sidesurfaces of the gate electrode layer 601 also serve as masks,introduction of the oxygen-defect-inducing factors 636 into parts of theoxide semiconductor layer 620, which overlap with the parts of theinsulating layer 609, which are provided on the side surfaces of thegate electrode layer 601, is blocked. Accordingly, the parts of theoxide semiconductor layer 620 become thelow-concentration-oxygen-defect-inducing-factor-containing regions 615 aand 615 b. In particular, in this embodiment, the gate electrode layer601 is thick, and furthermore, the gate insulating layer 604 is formed;thus, introduction of the oxygen-defect-inducing factors 632 into theoxide semiconductor layer 620 is blocked more.

Through the above-described steps, the transistor 650 can bemanufactured.

As the oxygen-defect-inducing factors 630, 632, and 636, one or moreelements selected from titanium (Ti), tungsten (W), molybdenum (Mo),aluminum (Al), cobalt (Co), zinc (Zn), indium (In), silicon (Si), andboron (B) can be used. In addition to the above oxygen-defect-inducingfactors, hydrogen and/or nitrogen can be used. Note that metal elementswith a high oxygen affinity are preferably used as theoxygen-defect-inducing factors 630, 632, and 636.

In the transistors 640 and 650 each of which includes the oxidesemiconductor layer 633 including thelow-concentration-oxygen-defect-inducing-factor-containing regions 615 aand 615 b and the source region 614 a and the drain region 614 b whichare high-concentration-oxygen-defect-inducing-factor-containing regionsthe resistance of which is reduced by introducing theoxygen-defect-inducing factors, contact resistance between the oxidesemiconductor layer 633 and the first source electrode layer 625 a andbetween the oxide semiconductor layer 633 and the first drain electrodelayer 625 b can be reduced; thus, on-state characteristics (e.g.,on-state current or field-effect mobility) are improved. Thus, thetransistor can have good electric characteristics.

The transistor with good electric characteristics is capable ofhigh-speed response and high-speed operation. Thus, the semiconductordevice including the transistor can have high performance.

Furthermore, the oxide semiconductor layer in which the conductivityvaries from part to part is provided, whereby electric fieldconcentration of the transistor can be suppressed and a high electricfield can be prevented from being locally applied. Thus, the withstandvoltage of the transistor can be improved, which results in highreliability of a semiconductor device.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 5

A semiconductor device and a method for manufacturing the semiconductordevice will be described with reference to FIGS. 4A to 4D. Note thatsame portions as in Embodiment 1 or 2 and portions having functionssimilar to those of the portions in Embodiment 1 or 2 are formed in amanner similar to that of Embodiment 1 or 2 and steps similar to thosein Embodiment 1 or 2 can be performed in a manner similar to that ofEmbodiment 1 or 2, and the description thereof is not repeated.

First, an insulating layer 407 is formed over a substrate 400. Then, afirst oxide semiconductor layer is formed over the insulating layer 407and a region including at least a surface of the first oxidesemiconductor layer is crystallized by first heat treatment, so that afirst oxide semiconductor layer 450 a is formed (see FIG. 4A),

The first oxide semiconductor layer 450 a formed over the insulatinglayer 407 is a three-component metal oxide and may be formed using anoxide semiconductor material which is represented by the chemicalformula, InM_(X)Zn_(Y)O_(Z) (Y=0.5 to 5). Here, M represents one or morekinds of elements selected from Group 13 elements such as gallium (Ga),aluminum (Al), or boron (B). Note that the Zn content and O content areset freely. The value of the M content may be zero (i.e., X=0). Incontrast, the value of the In content and that of the Zn content are notzero. In other words, the above expression includes In—Ga—Zn—O, In—Zn—O,and the like.

Besides, for the first oxide semiconductor layer 450 a, anIn—Sn—Ga—Zn—O-based oxide semiconductor which is a four-component metaloxide; an In—Sn—Zn—O-based oxide semiconductor, a Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, or aSn—Al—Zn—O-based oxide semiconductor which are three-component metaloxides; a Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-based oxidesemiconductor, a Zn—Mg—O-based oxide semiconductor, a Sn—Mg—O-basedoxide semiconductor, or an In—Mg—O-based oxide semiconductor which aretwo-component metal oxides; or an In—O-based oxide semiconductor, aSn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor canbe used.

In this embodiment, the first oxide semiconductor layer 450 a is formedby a sputtering method with the use of an In—Ga—Zn—O-based oxidesemiconductor target.

It is preferable that the relative density of the oxide semiconductor inthe oxide semiconductor target be greater than or equal to 80%, morepreferably greater than or equal to 95%, further preferably greater thanor equal to 99.9%. The first oxide semiconductor layer 450 a can bedense by being formed using an oxide semiconductor target with highrelative density. In addition, in this embodiment, the first oxidesemiconductor layer 450 a is intentionally crystallized by performingheat treatment in a later step; thus, an oxide semiconductor targetwhich allows crystallization to be easily caused is preferably used.

An atmosphere for formation of the first oxide semiconductor layer 450 ais preferably a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically argon) andoxygen. Specifically, a high-purity gas atmosphere from which impuritiessuch as hydrogen, water, a hydroxyl group, and hydride have been removedis preferably used, for example.

When the first oxide semiconductor layer 450 a is formed, for example, asubstrate is held in a treatment chamber kept under reduced pressure andthe substrate temperature is set to higher than or equal to 200° C. andlower than or equal to 600° C. Then, a sputtering gas from whichhydrogen and water have been removed is introduced while moisture whichremains in the treatment chamber is removed, and the first oxidesemiconductor layer 450 a is formed using metal oxide as a target. Thefirst oxide semiconductor layer 450 a is formed while the substrate isheated, whereby impurities contained in the first oxide semiconductorlayer 450 a can be reduced. In addition, damage due to sputtering can bereduced. It is preferable that moisture or the like which remains in asputtering apparatus is removed before, during, or after formation ofthe first oxide semiconductor layer 450 a. In order to remove moisturewhich remains in the treatment chamber, an entrapment vacuum pump suchas a cryopump is preferably used. From the treatment chamber which isevacuated with a cryopump, hydrogen or water is removed, whereby theconcentration of impurities in the first oxide semiconductor layer 450 acan be reduced.

Note that before the first oxide semiconductor layer 450 a is formed,preheat treatment is preferably performed in order to remove moisture orthe like which remains in the sputtering apparatus. As examples of thepreheat treatment, a method in which the inside of a film formationchamber is heated to a temperature higher than or equal to 200° C. andlower than or equal to 600° C. under reduced pressure, a method in whichintroduction and exhaust of nitrogen or an inert gas are repeated whilethe inside of the film formation chamber is heated, and the like can begiven. After the preheat treatment, the substrate or the sputteringapparatus is cooled. Then, the oxide semiconductor layer is formedwithout being exposed to air. In that case, not water but oil or thelike is preferably used as a coolant for the target. Although a certainlevel of effect can be obtained when introduction and exhaust ofnitrogen are repeated without heating, it is more preferable to performthe treatment with the inside of the film formation chamber is heated.

The first oxide semiconductor layer 450 a can be formed under thefollowing conditions, for example: the distance between the substrateand the target is 170 mm, the pressure is 0.4 Pa, the direct-current(DC) power is 0.5 kW, and the atmosphere is an oxygen atmosphere. Notethat pulsed direct-current (DC) power source is preferably used, inwhich case dust (powder or flake-like substances formed at the time ofthe film formation) can be reduced and the film thickness can beuniform. The thickness of the first oxide semiconductor layer 450 a ispreferably greater than or equal to 3 nm and less than or equal to 15nm, and is, for example, 5 nm in this embodiment. Note that theappropriate thickness of the first oxide semiconductor layer 450 avaries depending on the oxide semiconductor material to be used, theusage, or the like; therefore, the thickness may be determined asappropriate in accordance with the material, the usage, or the like.

The temperature of the first heat treatment is higher than or equal to450° C. and lower than or equal to 850° C., preferably higher than orequal to 550° C. and lower than or equal to 750° C. In addition, heatingtime is longer than or equal to 1 minute and shorter than or equal to 24hours. In this embodiment, as the first heat treatment, heat treatmentis performed at 700° C. in a nitrogen atmosphere for one hour so thatdehydration or dehydrogenation is performed, and then the atmosphere isswitched to an oxygen atmosphere so that oxygen is supplied to theinside of the first oxide semiconductor layer 450 a. In addition, water(including a hydroxyl group), hydrogen, or the like contained in thefirst oxide semiconductor layer 450 a can be removed by the first heattreatment.

Note that it is preferable that in the first heat treatment, water,hydrogen, and the like be not contained in nitrogen, oxygen or a raregas such as helium, neon, or argon. In addition, nitrogen, oxygen, or arare gas such as helium, neon, or argon which is introduced into a heattreatment apparatus preferably has a purity of 6N (99.9999%) or higher,more preferably 7N (99.99999%) or higher (that is, the concentration ofan impurity is lower than or equal to 1 ppm, preferably lower than orequal to 0.1 ppm). Alternatively, the first heat treatment may beperformed in ultra-dry air with an H₂O concentration of 20 ppm or less,more preferably 1 ppm or less. Water (including a hydroxyl group),hydrogen, or the like contained in the first oxide semiconductor layer450 a can be removed by such first heat treatment.

By the first heat treatment, the first oxide semiconductor layer 450 awhich includes a crystalline region (non-single-crystal region) in aregion including at least the surface thereof is formed. The crystallineregion formed in the region including the surface is formed by crystalgrowth proceeding from the surface toward the inside. The crystallineregion includes a plate-like crystal with an average thickness ofgreater than or equal to 2 nm and less than or equal to 10 nm. Thecrystalline region includes a crystal whose c-axis is aligned in adirection substantially perpendicular to the surface. Here, the“substantially perpendicular” means a state within ±10° from aperpendicular direction.

Note that the apparatus used for the first heat treatment is not limitedto a particular apparatus, and an apparatus for heating an object to beprocessed with the use of heat radiation or heat conduction from aheating element such as a resistance heating element, or the like can beused

Next, a second oxide semiconductor layer 454 is formed over the firstoxide semiconductor layer 450 a which includes the crystalline region inthe region including at least the surface (see FIG. 4B).

The second oxide semiconductor layer 454 can be formed in a mannersimilar to that of the first oxide semiconductor layer 450 a, with theuse of an In—Sn—Ga—Zn—O-based oxide semiconductor which is afour-component metal oxide; an In—Ga—Zn—O-based oxide semiconductor, anIn—Sn—Zn—O-based oxide semiconductor, an In—Al—Zn—O-based oxidesemiconductor, a Sn—Ga—Zn—O-based oxide semiconductor, anAl—Ga—Zn—O-based oxide semiconductor, or a Sn—Al—Zn—O-based oxidesemiconductor which are three-component metal oxides; an In—Zn—O-basedoxide semiconductor, a Sn—Zn—O-based oxide semiconductor, anAl—Zn—O-based oxide semiconductor, a Zn—Mg—O-based oxide semiconductor,a Sn—Mg—O-based oxide semiconductor, or an In—Mg—O-based oxidesemiconductor which are two-component metal oxides; an In—O-based oxidesemiconductor, a Sn—O-based oxide semiconductor, or a Zn—O-based oxidesemiconductor.

It is preferable that the second oxide semiconductor layer 454 be formedusing a material whose main component is the same as that of thematerial of the first oxide semiconductor layer 450 a or that the secondoxide semiconductor layer 454 have the same crystal structure as thefirst oxide semiconductor layer 450 a and a lattice constant similar tothat of the first oxide semiconductor layer 450 a (a mismatch of 1% orless).

In the case of using materials containing the same main components,crystal growth is easily caused in later crystallization of the secondoxide semiconductor layer 454 by using the crystalline region of thefirst oxide semiconductor layer 450 a as a seed. In addition, whenmaterials containing the same main component are used, the effectivethickness can be increased; thus, the use of materials containing thesame main component is suitable for application to power devices or thelike. In addition, in the case of using materials containing the samemain component, favorable interface properties such as adhesiveness orfavorable electric characteristics can be obtained.

In this embodiment, the second oxide semiconductor layer 454 is formedby a sputtering method with the use of an In—Ga—Zn—O-based oxidesemiconductor target. The formation of the second oxide semiconductorlayer 454 by a sputtering method may be performed in a manner similar tothe above-described formation of the first oxide semiconductor layer 450a by a sputtering method. Note that the thickness of the second oxidesemiconductor layer 454 is preferably larger than that of the firstoxide semiconductor layer 450 a. The second oxide semiconductor layer454 is preferably formed so that the sum of the thickness of the firstoxide semiconductor layer 450 a and that of the second oxidesemiconductor layer 454 is greater than or equal to 3 nm and less thanor equal to 50 nm. Note that the appropriate thickness varies dependingon the oxide semiconductor material to be used, the usage, or the like;therefore, the thickness may be determined as appropriate in accordancewith the material, the usage, or the like.

Next, second heat treatment is performed on the second oxidesemiconductor layer 454 to cause crystal growth using the crystallineregion of the first oxide semiconductor layer 450 a as a seed. Thus, asecond oxide semiconductor layer 450 b is formed (see FIG. 4C).

The second heat treatment is performed at a temperature higher than orequal to 450° C. and lower than or equal to 850° C., preferably higherthan or equal to 600° C. and lower than or equal to 700° C. for a periodlonger than or equal to 1 minute and shorter than or equal to 400 hours,preferably longer than or equal to 5 hours and shorter than or equal to20 hours, typically 10 hours.

Note that it is preferable also in the second heat treatment, water,hydrogen, and the like be not contained in nitrogen, oxygen or a raregas such as helium, neon, or argon. It is preferable that nitrogen,oxygen, or a rare gas such as helium, neon, or argon introduced into aheat treatment apparatus have a purity of greater than or equal to 6N,preferably greater than or equal to 7N. Alternatively, the second heattreatment may be performed in ultra-dry air with an H₂O concentration of20 ppm or lower, more preferably 1 ppm or lower. Water (including ahydroxyl group), hydrogen, or the like contained in the second oxidesemiconductor layer 450 b can be removed by such a second heattreatment. Accordingly, the first oxide semiconductor layer 450 a andthe second oxide semiconductor layer 450 b which are made to be i-typeor substantially i-type by reducing impurities and increasing the puritycan be formed.

In addition, when the temperature is raised in the second heattreatment, the inside of a furnace may be set to a nitrogen atmosphere,and when the temperature is decreased, the inside of the furnace may beswitched to an oxygen atmosphere. By performing crystallization (thisstep also serves as a dehydration step or a dehydrogenation step) in anitrogen atmosphere and then switching the atmosphere to an oxygenatmosphere, oxygen can be supplied to the inside of the second oxidesemiconductor layer 450 b.

In this manner, the second heat treatment is performed, whereby theentire region of the second oxide semiconductor layer 454 iscrystallized from the crystalline region formed at the interface betweenthe second oxide semiconductor layer 454 and the first oxidesemiconductor layer 450 a; thus, the second oxide semiconductor layer450 b can be formed. In addition, by the second heat treatment, acrystalline layer of the first oxide semiconductor layer 450 a caninclude highly-aligned crystals.

For example, in the case where an In—Ga—Zn—O-based oxide semiconductormaterial is used for the second oxide semiconductor layer 450 b, thesecond oxide semiconductor layer 450 b can include a crystal representedby InGaO₃(ZnO)_(m) (m>0 and m is not limited to a natural number), acrystal represented by In₂Ga₂ZnO₇ (In:Ga:Zn:O=2:2:1:7), or the like.Owing to the second heat treatment, the c-axis of such a crystal isaligned in a direction substantially perpendicular to the surfaces ofthe first oxide semiconductor layer 450 a and the second oxidesemiconductor layer 450 b.

Here, the above-described crystal contains any of In, Ga, and Zn, andcan be considered to have a stacked structure of layers parallel to thea-axis and the b-axis. Specifically, the above-described crystal has astructure in which a layer containing In and a layer not containing In(a layer containing Ga or Zn) are stacked in the c-axis direction.

In the In—Ga—Zn—O-based oxide semiconductor crystal, the conductivity ofthe layer containing In in a direction parallel to the a-axis and b-axisis favorable. This is because of the fact that electric conductivity ismainly controlled by In in the In—Ga—Zn—O-based oxide semiconductorcrystal and the fact that the 5 s orbital of one In atom overlaps withthe 5 s orbital of an adjacent In atom, whereby a carrier path isformed.

In the case where the first oxide semiconductor layer 450 a includes anamorphous region at the interface between the first oxide semiconductorlayer 450 a and the insulating layer 407, the second heat treatmentmight cause crystal growth which proceeds from the crystalline regionformed on the surface of the first oxide semiconductor layer 450 atoward the bottom surface of the first oxide semiconductor layer andmight crystallize the amorphous region. Note that the amorphous regionmight remain depending on the material for forming the insulating layer407, heat treatment conditions, or the like.

In the case where the first oxide semiconductor layer 450 a and thesecond oxide semiconductor layer 454 are formed using oxidesemiconductor materials containing the same main components, asillustrated in FIG. 4C, crystals grow upward to the surface of thesecond oxide semiconductor layer 454 by using the first oxidesemiconductor layer 450 a as a seed crystal of the crystal growth, sothat the second oxide semiconductor layer 450 b is formed and the firstoxide semiconductor layer 450 a and the second oxide semiconductor layer450 b have the same crystal structure. Therefore, although the boundarybetween the first oxide semiconductor layer 450 a and the second oxidesemiconductor layer 450 b is indicated by a dotted line in FIG. 4C, itsometimes cannot be distinguished, and the first oxide semiconductorlayer 450 a and the second oxide semiconductor layer 450 b can besometimes regarded as one layer.

Note that a heat treatment apparatus for the second heat treatment canbe used under conditions similar to those of the first heat treatment.

Next, the first oxide semiconductor layer 450 a and the second oxidesemiconductor layer 450 b are processed into an island shape by a methodsuch as etching using a mask, so that an island-shaped oxidesemiconductor layer 450 is formed (see FIG. 4D).

The formed island-shaped oxide semiconductor layer 450 is used and themanufacturing methods described in Embodiments 1 to 3 are used incombination with the manufacturing method in this embodiment, whereby atransistor according to one embodiment of the present invention can bemanufactured.

As described in this embodiment, the oxide semiconductor layer is formedthrough two deposition steps and two heat treatment steps, whereby athick crystalline region (non-single-crystal region), that is, acrystalline region the c-axis of which is aligned in a directionperpendicular to a surface of the layer can be formed even when any ofan oxide, a nitride, a metal, or the like is used as a material for abase component. Note that in the case where a general siliconsemiconductor is used, a crystalline structure is broken and theresistivity is significantly increased after ion implantation, and forthat reason, the crystallinity needs to be recovered by heat treatment.Also in this embodiment, a crystalline structure in part of an oxidesemiconductor, into which oxygen-defect-inducing factors are implantedby ion implantation is broken, so that the oxide semiconductor is in anamorphous state. However, even when the oxide semiconductor is in anamorphous state, sufficient conductivity can be obtained as long assufficient carriers exist; thus, annealing after the ion implantation isnot needed.

The transistor which includes the oxide semiconductor layer includingsuch a crystalline region can have good on-state characteristics such ashigh field-effect mobility. In addition, the transistor can have lowoff-state current.

Note that this embodiment can be implemented in appropriate combinationwith any of the other embodiments.

Embodiment 6

A semiconductor device (also referred to as a display device) with adisplay function can be manufactured using the transistor an example ofwhich is described in any of Embodiments 1 to 5 in a pixel portion andfurther in a driver circuit. Further, part or whole of a driver circuitcan be formed over the same substrate as a pixel portion with the use ofa transistor, whereby a system-on-panel can be obtained.

A variety of display devices each including a display element can beprovided using the transistor an example of which is described in any ofEmbodiments 1 to 5. As the display element, a liquid crystal element(also referred to as a liquid crystal display element) or alight-emitting element (also referred to as a light-emitting displayelement) can be used. The light-emitting element includes, in itscategory, an element whose luminance is controlled by a current or avoltage, and specifically includes, in its category, an inorganicelectroluminescent (EL) element, an organic EL element, and the like.Furthermore, a display medium whose contrast is changed by an electriceffect, such as electronic ink, can be used.

In FIG. 5A, a sealant 4005 is provided so as to surround a pixel portion4002 provided over a first substrate 4001, and the pixel portion 4002 issealed between the first substrate 4001 and the second substrate 4006.In FIG. 5A, a signal line driver circuit 4003 and a scan line drivercircuit 4004 which are formed using a single crystal semiconductor filmor a polycrystalline semiconductor film over a substrate separatelyprepared are mounted in a region that is different from the regionsurrounded by the sealant 4005 over the first substrate 4001. Varioussignals and potential are supplied to the signal line driver circuit4003 and the scan line driver circuit 4004 each of which is separatelyformed, and the pixel portion 4002 from flexible printed circuits (FPCs)4018 a and 4018 b.

In FIGS. 5B and 5C, the sealant 4005 is provided so as to surround thepixel portion 4002 and the scan line driver circuit 4004 which areprovided over the first substrate 4001. The second substrate 4006 isprovided over the pixel portion 4002 and the scan line driver circuit4004. Therefore, the pixel portion 4002 and the scan line driver circuit4004 as well as a display element are sealed by the first substrate4001, the sealant 4005, and the second substrate 4006. In FIGS. 5B and5C, the signal line driver circuit 4003 which is formed using a singlecrystal semiconductor film or a polycrystalline semiconductor film overa substrate separately prepared is mounted in a region that is differentfrom the region surrounded by the sealant 4005 over the first substrate4001. In FIGS. 5B and 5C, various signals and potential are supplied tothe signal line driver circuit 4003 which is separately formed, the scanline driver circuit 4004, and the pixel portion 4002 from an FPC 4018.

Although FIGS. 5B and 5C each illustrate the example in which the signalline driver circuit 4003 is formed separately and mounted on the firstsubstrate 4001, the present invention is not limited to this structure.The scan line driver circuit may be separately formed and then mounted,or only part of the signal line driver circuit or part of the scan linedriver circuit may be separately formed and then mounted.

Note that a connection method of a separately formed driver circuit isnot particularly limited, and a chip on glass (COG) method, a wirebonding method, a tape automated bonding (TAB) method or the like can beused. FIG. 5A illustrates an example in which the signal line drivercircuit 4003 and the scan line driver circuit 4004 are mounted by a COGmethod. FIG. 5B illustrates an example in which the signal line drivercircuit 4003 is mounted by a COG method. FIG. 5C illustrates an examplein which the signal line driver circuit 4003 is mounted by a TAB method.

The display device includes a panel in which the display element issealed, and a module in which an IC or the like including a controlleris mounted on the panel.

Note that a display device in this specification refers to an imagedisplay device, a display device, or a light source (including alighting device). Further, the display device includes the followingmodules in its category: a module to which a connector such as an FPC, aTAB tape, or a TCP is attached; a module having a TAB tape or a TCPwhich is provided with a printed wiring board at the end thereof; and amodule having an integrated circuit (IC) which is directly mounted on adisplay element by a COG method.

The pixel portion 4002 and the scan line driver circuit 4004 which areprovided over the first substrate 4001 includes a plurality oftransistors. The transistor an example of which is described in any ofEmbodiments 1 to 5 can be used as the transistor.

In the case where a liquid crystal element is used as a display element,a thermotropic liquid crystal, a low-molecular liquid crystal, ahigh-molecular liquid crystal, a polymer dispersed liquid crystal, aferroelectric liquid crystal, an anti-ferroelectric liquid crystal, orthe like is used. These liquid crystal materials exhibit a cholestericphase, a smectic phase, a cubic phase, a chiral nematic phase, anisotropic phase, or the like depending on conditions.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while temperature of cholesteric liquidcrystal is increased. Since the blue phase appears only in a narrowtemperature range, a liquid crystal composition in which several weightpercent or more of a chiral material is mixed is used for the liquidcrystal layer in order to improve the temperature range. The liquidcrystal composition which includes a liquid crystal showing a blue phaseand a chiral agent has a short response time of 1 msec or less, hasoptical isotropy, which makes the alignment process unneeded, and has asmall viewing angle dependence. In addition, since an alignment filmdoes not need to be provided and rubbing treatment is unnecessary,electrostatic discharge damage caused by the rubbing treatment can beprevented and defects and damage of the liquid crystal display devicecan be reduced in the manufacturing process. Thus, productivity of theliquid crystal display device can be increased. A transistor includingan oxide semiconductor layer particularly has a possibility thatelectric characteristics of the transistor may fluctuate significantlyby the influence of static electricity and deviate from the designedrange. Therefore, it is more effective to use a blue phase liquidcrystal material for a liquid crystal display device which includes atransistor including an oxide semiconductor layer.

The specific resistivity of a liquid crystal material is greater than orequal to 1×10⁹ Ω·cm, preferably greater than or equal to 1×10¹¹ Ω·cm,more preferably greater than or equal to 1×10¹⁴ Ω·cm. Note that thespecific resistivity in this specification is measured at 20° C.

The capacitance of a storage capacitor provided in a liquid crystaldisplay device is set in consideration of leakage current or the like ofa transistor placed in a pixel portion so that charges can be held for apredetermined period. The capacitance of the storage capacitor may beset in consideration of off-state current or the like of the transistor.The transistor described in Embodiment 4 or 5 which includes ahigh-purity oxide semiconductor layer is used, so that it is onlynecessary to provide a storage capacitor having capacitance which is ⅓or less, preferably ⅕ or less of liquid crystal capacitance in eachpixel.

For the liquid crystal display device, a TN (twisted nematic) mode, anIPS (in-plane-switching) mode, an FFS (fringe field switching) mode, anMVA (multi-domain vertical alignment) mode, a PVA (patterned verticalalignment) mode, an ASM (axially symmetric aligned micro-cell) mode, anOCB (Optical Compensated Birefringence) mode, an FLC (ferroelectricliquid crystal) mode, an AFLC (anti ferroelectric liquid crystal) mode,or the like can be used.

A normally black liquid crystal display device such as a transmissiveliquid crystal display device utilizing a vertical alignment (VA) modeis also preferable. Some examples of the vertical alignment mode aregiven. For example, a multi-domain vertical alignment (MVA) mode, apatterned vertical alignment (PVA) mode, an ASV mode, or the like can beused.

Furthermore, this embodiment can be applied to a VA liquid crystaldisplay device. The VA liquid crystal display device has a kind of formin which alignment of liquid crystal molecules of a liquid crystaldisplay panel is controlled. In the VA liquid crystal display device,liquid crystal molecules are aligned in a vertical direction withrespect to a panel surface when no voltage is applied. Moreover, it ispossible to use a method called domain multiplication or multi-domaindesign, in which a pixel is divided into some regions (subpixels) andmolecules are aligned in different directions in their respectiveregions.

In the display device, a black matrix (a light-blocking layer), anoptical member (an optical substrate) such as a polarizing member, aretardation member, or an anti-reflection member, and the like areprovided as appropriate. For example, circular polarization may beobtained by using a polarizing substrate and a retardation substrate. Inaddition, a backlight, a side light, or the like may be used as a lightsource.

As a display method in the pixel portion, a progressive method, aninterlace method or the like can be employed. Color elements controlledin a pixel at the time of color display are not limited to three colors:R, G, and B (R, G, and B correspond to red, green, and blue,respectively. For example, R, G, B, and W (W corresponds to white); R,G, B, and one or more of yellow, cyan, magenta, and the like; or thelike can be used. The sizes of display regions may be different betweenrespective dots of color elements. The present invention is not limitedto the application to a display device for color display but can also beapplied to a display device for monochrome display.

A light-emitting element utilizing electroluminescence can be used asthe display element included in the display device. Light-emittingelements utilizing electroluminescence are classified according towhether a light-emitting material is an organic compound or an inorganiccompound. In general, the former is referred to as an organic ELelement, and the latter is referred to as an inorganic EL element.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions.

Further, an electronic paper in which electronic ink is driven can beprovided as the display device. The electronic paper is also called anelectrophoretic display device (electrophoretic display) and hasadvantages in that it has the same level of readability as regularpaper, it has less power consumption than other display devices, and itcan be made to be thin and light.

A variety of modes can be considered as an electrophoresis displaydevice of this embodiment, but the electrophoresis display device ofthis embodiment is a device in which a plurality of microcapsules eachincluding first particles having a positive charge and second particleshaving a negative charge are dispersed in a solvent or a solute, and anelectrical field is applied to the microcapsules so that the particlesin the microcapsules move in opposite directions of each other, and onlya color of the particles gathered on one side is displayed. Note thatthe first particles and the second particles each contain pigment and donot move without an electric field. Moreover, the first particles andthe second particles have different colors (which may be colorless).

In this way, an electrophoretic display device is a display thatutilizes a so-called dielectrophoretic effect by which a substance thathas a high dielectric constant move to a region in which there is a highelectric field.

A solution in which the above microcapsules are dispersed in a solventis referred to as electronic ink. This electronic ink can be printed ona surface of glass, plastic, cloth, paper, or the like. Furthermore, byusing a color filter or particles that have a pigment, color display canalso be achieved.

Note that the first particles and the second particles in themicrocapsules may each be formed of a single material selected from aconductive material, an insulating material, a semiconductor material, amagnetic material, a liquid crystal material, a ferroelectric material,an electroluminescent material, an electrochromic material, and amagnetophoretic material, or formed of a composite material of any ofthese.

As the electronic paper, a display device in which a twisting balldisplay system is used can be used. The twisting ball display systemrefers to a method in which spherical particles each colored in blackand white are arranged between a first electrode layer and a secondelectrode layer which are electrode layers used for a display element,and a potential difference is generated between the first electrodelayer and the second electrode layer to control orientation of thespherical particles, whereby display is performed.

Any of the transistors described in Embodiments 1 to 5 is used for thedisplay device which is described above as an example, whereby thedisplay device can have a variety of functions.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 7

A semiconductor device disclosed in this specification can be applied toa variety of electronic devices (including game machines). Examples ofelectronic devices are a television set (also referred to as atelevision or a television receiver), a monitor of a computer or thelike, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone handset (also referred to as amobile phone or a mobile phone device), a portable game console, aportable information terminal, an audio reproducing device, alarge-sized game machine such as a pachinko machine, and the like.

FIG. 6A illustrates a note book personal computer which is manufacturedby mounting at least the semiconductor device described in any ofEmbodiments 1 to 6 as a component and includes a main body 3001, ahousing 3002, a display portion 3003, a keyboard 3004, and the like.

FIG. 6B illustrates a portable information terminal device (PDA)) whichis manufactured by mounting at least the semiconductor device describedin any of Embodiments 1 to 6 as a component and includes a main body3021 is provided with a display portion 3023, an external interface3025, an operation button 3024, and the like. A stylus 3022 is includedas an accessory for operation.

Further, the semiconductor device described in any of Embodiments 1 to 6can be applied to an electronic paper. FIG. 6C illustrates an e-bookreader manufactured by mounting the electronic paper as a component.FIG. 6C illustrates an example of an e-book reader. For example, thee-book reader 2700 includes two housings: a housing 2701 and a housing2703. The housing 2701 and the housing 2703 are combined with a hinge2711 so that the e-book reader 2700 can be opened and closed with thehinge 2711 as an axis. Such a structure allows the e-book reader 2700 tooperate like a paper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, a display portion onthe right (the display portion 2705 in FIG. 6C) can display text and adisplay portion on the left (the display portion 2707 in FIG. 6C) candisplay graphics.

FIG. 6C illustrates an example in which the housing 2701 is provided inan operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, operation keys 2723, a speaker 2725,and the like. With the operation keys 2723, pages can be turned. Notethat a keyboard, a pointing device, or the like may also be provided onthe surface of the housing, on which the display portion is provided.Furthermore, an external connection terminal (e.g., an earphone terminalor a USB terminal), a recording medium insertion portion, and the likemay be provided on the back surface or the side surface of the housing.Moreover, the e-book reader 2700 may have a function of an electronicdictionary.

The e-book reader 2700 may have a configuration capable of wirelesslytransmitting and receiving data. Through wireless communication, desiredbook data or the like can be purchased and downloaded from an electronicbook server.

FIG. 6D illustrates a mobile phone which is manufactured by mounting atleast the semiconductor device described in any of Embodiments 1 to 6 asa component and includes two housings: a housing 2800 and a housing2801. The housing 2801 includes a display panel 2802, a speaker 2803, amicrophone 2804, a pointing device 2806, a camera lens 2807, an externalconnection terminal 2808, and the like. The housing 2800 includes asolar cell 2810 for charging of the portable phone, an external memoryslot 2811, and the like. Further, an antenna is incorporated in thehousing 2801.

The display panel 2802 is provided with a touch panel. A plurality ofoperation keys 2805 which is displayed as images is illustrated bydashed lines in FIG. 6D. Note that a booster circuit by which a voltageoutput from the solar cell 2810 is increased to be sufficiently high foreach circuit is also included.

In the display panel 2802, the display direction can be appropriatelychanged depending on a usage pattern. Further, the display device isprovided with the camera lens 2807 on the same surface as the displaypanel 2802, and thus it can be used as a video phone. The speaker 2803and the microphone 2804 can be used for videophone calls, soundrecording, and playback as well as voice calls. Moreover, the housings2800 and 2801 in a state where they are developed as illustrated in FIG.6D can shift by sliding so that one is lapped over the other; therefore,the size of the cellular phone can be reduced, which makes the cellularphone suitable for being carried.

The external connection terminal 2808 can be connected to an AC adapterand various types of cables such as a USB cable, and charging and datacommunication with a personal computer are possible. Moreover, a largeamount of data can be stored by inserting a storage medium into theexternal memory slot 2811 and can be moved.

Further, in addition to the above functions, an infrared communicationfunction, a television reception function, or the like may be provided.

FIG. 6E illustrates a digital video camera which is manufactured bymounting at least the semiconductor device described in any ofEmbodiments 1 to 6 as a component and includes a main body 3051, adisplay portion A 3057, an eyepiece 3053, an operation switch 3054, adisplay portion B 3055, a battery 3056, and the like.

FIG. 6F illustrates an example of a television set which is manufacturedby mounting at least the semiconductor device described in any ofEmbodiments 1 to 6 as a component. In a television set 9600, a displayportion 9603 is incorporated in a housing 9601. The display portion 9603can display images. Here, the housing 9601 is supported by a stand 9605.

The television set 9600 can be operated by an operation switch of thehousing 9601 or a separate remote controller. Further, the remotecontroller may be provided with a display portion for displaying dataoutput from the remote controller.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the use of the receiver, general televisionbroadcasting can be received. Moreover, when the display device isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) information communicationcan be performed.

This embodiment can be freely combined with any of Embodiments 1 to 6.

This application is based on Japanese Patent Application serial no.2009-288428 filed with Japan Patent Office on Dec. 18, 2009, the entirecontents of which are hereby incorporated by reference.

The invention claimed is:
 1. A semiconductor device comprising: an oxidesemiconductor layer including a channel formation region, a firstregion, and a second region over a substrate; a gate insulating layerover the oxide semiconductor layer; a gate electrode layer over the gateinsulating layer; an insulating layer over the gate electrode layer andthe gate insulating layer; and a source electrode layer and a drainelectrode layer over the insulating layer, wherein the first region isone of a source or drain region, wherein each of the first region andthe second region includes oxygen defects due to oxygen-defect-inducingfactors, wherein the second region is between the channel formationregion and the first region, wherein a concentration of theoxygen-defect-inducing factors of the second region is lower than thatof the first region, wherein the insulating layer includes a first partoverlapping with the first region and a second part overlapping with thesecond region, wherein an interface between the first part and thesecond part is substantially aligned with an interface between the firstregion and the second region, and wherein the gate insulating film isover and in contact with the first region and the second region.
 2. Thesemiconductor device according to claim 1, wherein the channel formationregion includes oxygen-defect-inducing factors.
 3. The semiconductordevice according to claim 2, wherein a concentration of theoxygen-defect-inducing factors in the channel formation region is lessthan 1×10¹⁴ atoms/cm³.
 4. The semiconductor device according to claim 1,wherein the gate electrode overlaps with the channel formation region,wherein the insulating layer covers the oxide semiconductor layer, thegate insulating layer, and the gate electrode layer, and wherein thesource electrode layer is electrically connected to the source regionand the drain electrode layer is electrically connected to the drainregion.
 5. The semiconductor device according to claim 1, wherein theoxygen-defect-inducing factors are one or more selected from the groupconsisting of titanium, tungsten, and molybdenum.
 6. The semiconductordevice according to claim 1, wherein the channel formation region hasn-type conductivity.
 7. A semiconductor device comprising: an oxidesemiconductor layer including a channel formation region, a firstregion, and a second region over a substrate; a gate insulating layerover the oxide semiconductor layer; a gate electrode layer over the gateinsulating layer; an insulating layer over the oxide semiconductorlayer, the insulating layer having a first surface and a second surfaceopposing to the first surface; and a source electrode layer and a drainelectrode layer over the insulating layer, wherein the first region isone of a source or drain region, wherein each of the first region andthe second region includes oxygen defects due to oxygen-defect-inducingfactors, wherein the second region is between the channel formationregion and the first region, wherein a concentration of theoxygen-defect-inducing factors of the second region is lower than thatof the first region, wherein a part of the insulating layer overlapswith the second region, wherein the first surface of the insulatinglayer in the part of the insulating layer is in contact with the gateelectrode, wherein the second surface of the insulating layer in thepart of the insulating layer is substantially aligned with an interfacebetween the first region and the second region, and wherein the gateinsulating film is over and in contact with the first region and thesecond region.
 8. The semiconductor device according to claim 7, whereinthe channel formation region includes oxygen-defect-inducing factors. 9.The semiconductor device according to claim 8, wherein a concentrationof the oxygen-defect-inducing factors in the channel formation region isless than 1×10¹⁴ atoms/cm³.
 10. The semiconductor device according toclaim 7, wherein the gate electrode overlaps with the channel formationregion, wherein the insulating layer covers the oxide semiconductorlayer, the gate insulating layer, and the gate electrode layer, andwherein the source electrode layer is electrically connected to thesource region and the drain electrode layer is electrically connected tothe drain region.
 11. The semiconductor device according to claim 7,wherein the oxygen-defect-inducing factors are one or more selected fromthe group consisting of titanium, tungsten, and molybdenum.
 12. Thesemiconductor device according to claim 7, wherein the channel formationregion has n-type conductivity.
 13. A semiconductor device comprising:an oxide semiconductor layer including a channel formation region andsource and drain regions; a gate insulating layer over the oxidesemiconductor layer; a gate electrode layer over the gate insulatinglayer; an insulating layer over the gate electrode layer; and a sourceelectrode layer and a drain electrode layer over the insulating layer,wherein each of the source and drain regions includes oxygen defects dueto elements, wherein the gate insulating film is over and in contactwith the source and drain regions, wherein a concentration of theelements of the source region or the drain region is higher than that ofthe channel formation region, and wherein the elements are one or moreselected from the group consisting of titanium, tungsten, andmolybdenum.
 14. The semiconductor device according to claim 13, whereinthe channel formation region includes the elements.
 15. Thesemiconductor device according to claim 13, wherein the gate electrodeoverlaps with the channel formation region, wherein the insulating layercovers the oxide semiconductor layer, the gate insulating layer, and thegate electrode layer, and wherein the source electrode layer iselectrically connected to the source region and the drain electrodelayer is electrically connected to the drain region.